A Simulation Model for Wet Cleaning of Deep Trenches

Nakao, Isakane; Umimoto, H.; Odanaka, S.; Ohzone, T.; Esaki, Hiroki

doi:10.1149/1.2086931

Cited by 7 publications

(5 citation statements)

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“…This is described by the Pascal equation = 2-y cos 0/w [11 where p = p, -P1qud is the pressure difference across the interface, y is the surface tension, 0 is the contact angle, and w is the gap width. This is described by the Pascal equation = 2-y cos 0/w [11 where p = p, -P1qud is the pressure difference across the interface, y is the surface tension, 0 is the contact angle, and w is the gap width.…”

Section: Resultsmentioning

confidence: 99%

“…Wetting-The driving force of wetting is a pressure gradient that arises from the hydrophilic nature of the Si02 surface. This is described by the Pascal equation = 2-y cos 0/w [11 where p = p, -P1qud is the pressure difference across the interface, y is the surface tension, 0 is the contact angle, and w is the gap width. Analysis of this equation shows that for a 0.5 p.m Si02 feature, the wetting time is less than 1000 ms.1° From contact angle measurements, we have confirmed that the Si02 surface becomes more hydrophilic after the sequence of oxygen plasma and SPM treatments.…”

Section: Resultsmentioning

confidence: 99%

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Limitation of HF‐Based Chemistry for Deep‐Submicron Contact Hole Cleaning on Silicides

Baklanov

Kondoh

Donaton

et al. 1998

J. Electrochem. Soc.

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The limitation of the use of HF-based chemistry for the cleaning of submicron high aspect ratio features is discussed. In this paper we describe the post-dry-etch cleaning of contact holes on TiSi2. This cleaning process is a combination of the use of oxidizing agents to remove residues consisting of fluorinated polymers and titanium fluorides, and HF-last cleaning to remove 5i02 on TiSi2. The HF-last cleaning is necessary to reduce the contact resistance. Two issues are pointed out: a very narrow process window for the HF etch time, and a strong hole size dependence of the contact resistance. These issues are not seen when soft sputter etching is used instead of HF-last cleaning. Concerning the narrow process window, the contact resistance decreases with increasing HF treatment time but increases again after passing through a minimum value. The kinetic study of TiSi2 etching shows that a preferential etching of the C49 phase takes place during an HF treatment. As a result, the TiSi2 surface becomes porous, which is thought to decrease the contact area. The hole size dependence is discussed in view of transport of chemical species in the contact hole. It is shown that the size dependence can be explained by assuming an abnormally small diffusion coefficient. HF-Si02 chemistry at the sidewall surface of narrow hydrophilic features can explain this abnormally small diffusivity.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Limitation of HF‐Based Chemistry for Deep‐Submicron Contact Hole Cleaning on Silicides

Baklanov

Kondoh

Donaton

et al. 1998

J. Electrochem. Soc.

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“…Whereas some chemicals (i.e. HF) exhibit an excellent wetting [6] some other ones (i.e. SC1) show poor wetting [7].…”

Section: Structures Wetting By Wet Chemicalsmentioning

confidence: 99%

Metal Removal Efficiency in High Aspect Ratio Structures

Garnier

Fontaine

2016

SSP

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An extremely low level of metal contamination is required for specific devices like memories and CMOS Image sensors. Most of past work in the literature has focused on blanket wafer decontamination, since metrology is mostly adapted to flat surfaces. Metal removal efficiency has been compared between blanket wafers versus high aspect ratio deep trenches wafers. Two different metrology technics enable a quantitative and spatial metal removal determination on patterned wafers. Efficient cleaning in high aspect ratio structures requires much longer cleaning recipes than on flat surfaces.

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“…Although the substrate of interest is nonplanar, the flat plate model is a valid approximation because the flow is approximately equal to zero within the features as well. 14 Because the flow profile is nearly unidirectional, diffusion dominates in the y direction ͑in the limit of tightly packed features, otherwise radial diffusion oc-curs͒, and convection dominates in the x direction. Therefore, Eq.…”

Section: Complete Wetting Through Gas Transportmentioning

confidence: 99%

Incomplete Wetting of Nanoscale Thin-Film Structures

Spuller

Hess

2003

J. Electrochem. Soc.

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With each new generation of integrated circuits and other nanostructured devices produced at ever-decreasing length scales, the extension of liquid-phase processes for the manufacturing of these devices is uncertain. The current work investigates the ability of liquids to wet nanoscale features. A model for wetting time is derived that may be used to identify those geometries for which wetting is critical. Conditions under which wetting time is significant may result in low yield and poor uniformity and may require alternate-phase processing. Furthermore, the dependence of wetting time on the properties of the fluid are quantified so that fluids may be designed to have optimal properties and thus optimal performance. The resulting model can be used as a tool to predict future processing requirements, and when necessary, to design novel processes implementing alternative phase fluids ͑e.g., vapor, subcritical, and supercritical fluids͒.

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A Simulation Model for Wet Cleaning of Deep Trenches

Cited by 7 publications

References 0 publications

Limitation of HF‐Based Chemistry for Deep‐Submicron Contact Hole Cleaning on Silicides

Limitation of HF‐Based Chemistry for Deep‐Submicron Contact Hole Cleaning on Silicides

Metal Removal Efficiency in High Aspect Ratio Structures

Incomplete Wetting of Nanoscale Thin-Film Structures

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