A single layer negative tone lift-off photo resist for patterning a magnetron sputtered Ti/Pt/Au contact system and for solder bumps

Voigt, Anja; Heinrich, M.; Hauck, Karin; Mientus, R.; Gruetzner, G.; Topper, Michael J.; Ehrmann, O.

doi:10.1016/j.mee.2004.12.064

Cited by 27 publications

(14 citation statements)

References 4 publications

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“…This behavior is in accordance with the finding that an additional thermal treatment (hard bake) is suited to improve the cross-link-density, thus further stabilizing the resist structures. With ma-N 405, a maximum temperature of 110 C is suggested for this purpose, 10 in accordance with our reversed order FIG. 3.…”

Section: A Dose Curvessupporting

confidence: 83%

Cross-linking control during imprint for hybrid lithography

Dhima

Steinberg

Möllenbeck

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Hybrid lithography combining thermal nanoimprint with optical lithography is an effective means to prepare structures with differing geometries (nanometer, micrometer) over large areas, e.g., for sensor applications. For the realization of this technique, the suitability of photoresists for this process has to be investigated. In case of negative tone resists, the cross-linking induced or provided by exposure may be amplified in the imprint step due to heating times in the minute range. As cross-linking may impede the imprint, a subtle adjustment of the exposure dose with respect to the imprint temperature envisaged is required for successful processing. With an imprint temperature of 100 °C, good results for hybrid lithography could be obtained with two commercially available negative tone resists: ma-N 405 and ARN 4410. The latter could successfully be used for a subsequent liftoff. The best results were obtained when the resists were exposed before the imprint step.

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Section: A Dose Curvessupporting

confidence: 83%

Cross-linking control during imprint for hybrid lithography

Dhima

Steinberg

Möllenbeck

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…9,10 Lift-off was performed with mr-Rem 400 remover (micro resist technology GmbH) in an ultrasonic bath at 50 C. A 30 nm-thick Au layer was sputtered (SCD 040, Balzers) on the samples without any previous dry etching, because the residual layer had already been removed during development. The samples were cooled down to room temperature, spin-coated with hexa-methyl-di-silazane (spin speed ¼ 6000 rpm and spin time ¼ 30 s) and prebaked at 100 C for 10 min in order to improve the adhesion of the photoresist to the substrate.…”

Section: Methodsmentioning

confidence: 99%

Resist reflow minimization via viscosity control by exposure

Dhima¹,

Steinberg²,

Mayer³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…During the stripping process, and the metal sitting on the top of the photoresist is removed while directly sitting on the wafer remains and becomes a metal pattern, thus inversed metal pattern toward photoresist pattern is fabricated. [5] Generally, e-beam deposition or sputtering is used to form thin metal film, and the sputtering process is often adopted as a deposition method due to several advantages such as good adhesion between metal and substrate and good metal thickness uniformity. After metal sputtered, the metal is deposited not only on the top surface of the photoresist but also directly on the wafer surface without the photoresist.…”

Section: Introductionmentioning

confidence: 99%

Development of Lift-off Photoresists with Unique Bottom Profile

Ito¹,

Hasegawa²,

Matsuki³

et al. 2015

Transactions of The Japan Institute of Electronics Packaging

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Lift-off method for metal patterning has been widely used in the variety of electronic device fabrication processes such as semiconductor packaging, MEMS, and LED manufacturing. The big advantages of using lift-off method are the cost saving and the process simplification. However there is a serious issue that the deposited metal pattern has unexpected edge crown after photoresist stripping. In order to achieve desired metal patterns, two types of novel lift-off photoresist were developed, one is a single-layer negative tone photoresist and the other is a double-layer positive tone photoresist.After exposure and development processes, both the photoresists show unique and well-controlled "undercut" profile, which enables to form a targeted metal configuration after stripping. This paper reports the key parameter of photoresist and how to control the undercut profile.

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A single layer negative tone lift-off photo resist for patterning a magnetron sputtered Ti/Pt/Au contact system and for solder bumps

Cited by 27 publications

References 4 publications

Cross-linking control during imprint for hybrid lithography

Cross-linking control during imprint for hybrid lithography

Resist reflow minimization via viscosity control by exposure

Development of Lift-off Photoresists with Unique Bottom Profile

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