A “smarter-cut” approach to low temperature silicon layer transfer

Tong, Qiaoling; Scholz, Roland; Gösele, U.; Lee, T.-H.; Huang, Lixiao; Chao, Yu-Lin; Tan, T. Y.

doi:10.1063/1.120601

Cited by 109 publications

(62 citation statements)

References 7 publications

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“…[61] It is known that even at room temperature B and other group III elements in Si can be strongly passivated by H, resulting in the formation of B±H complexes:…”

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confidence: 99%

Wafer Bonding and Layer Splitting for Microsystems

Tong¹,

1999

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In advanced microsystems various types of devices (metal-oxide semiconductor field-effect transistors, bipolar transistors, sensors, actuators, microelectromechanical systems, lasers) may be on the same chip, some of which are 3D structures in nature. Therefore, not only materials combinations (integrated materials) are required for optimal device performance of each type but also process technologies for 3D device fabrication are essential. Wafer bonding and layer transfer are two of the fundamental technologies for the fabrication of advanced microsystems. In this review, the generic nature of both wafer bonding and hydrogen-implantation-induced layer splitting are discussed. The basic processes underlying wafer bonding and the layer splitting process are presented. Examples of bonding and layer splitting of bare or processed semiconductor and oxide wafers are described.

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“…[61] It is known that even at room temperature B and other group III elements in Si can be strongly passivated by H, resulting in the formation of B±H complexes:…”

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confidence: 99%

Wafer Bonding and Layer Splitting for Microsystems

Tong¹,

1999

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“…The Si-implantation was done prior to the H-implantation and was not followed by a RTA. Tong et al [156] have reported that in B-implanted samples the stress induced by the B-implantation is not the cause for the observed enhancement in surface blistering. For the present samples, which were implanted with a low Si dose, the anticipated strain is low.…”

Section: Blister Formation In the B+h Implanted Samples When The Boromentioning

confidence: 99%

“…At a given annealing duration, a greater reduction is achieved in the annealing temperature required to form surface blisters, when pre-implanted boron is present in the as-implanted state compared to pre-implanted boron electrically activated before the H-ion implantation. [156] In summary, the study has shown that long-range diffusion of hydrogen-implanted into n-type silicon takes place for an annealing temperature of 390 °C. The presence of a preimplanted boron profile, at depths greater than the implanted hydrogen profile, and the long-range hydrogen diffusion it caused did however not induce an Ion-Cut shift towards larger depths.…”

Section: The Influence Of Boron At Interstitial Lattice Sites On Hydrmentioning

confidence: 99%

“…Recent research has shown that B-ion implantation into silicon prior to the H-ion implantation leads to a significant reduction in the annealing temperature (and/or annealing time) required for the exfoliation of the silicon layer in the Ion-Cut process. [156] Although a tremendous amount of research on the boron-hydrogen interaction in silicon has been conducted, to date the underlying mechanisms behind the enhancement of the Ion-Cut due to the presence of boron are still unknown.…”

Section: Boron + Hydrogen Co-implantationmentioning

confidence: 99%

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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer¹

2002

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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“…This wafer-scale ultra-microtomy is usually referred to as exfoliation or``smart cut''. However, strictly speaking Smart Cut 1 refers to a proprietary process sequence, and alternative suggestions as to how to realise the layer splitting have been demonstrated successfully [27]. The principle behind Bruel's idea is deceptively simple (Fig.…”

Section: Ion Beam Cuttingmentioning

confidence: 99%

Silicon-on-insulator: materials aspects and applications

Plößl

Kräuter

2000

Solid-State Electronics

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The purpose of this contribution is to give an overview of silicon-on-insulator (SOI) technology with emphasis on the fabrication of SOI substrates and their material properties. Although the concept of SOI has been around for several decades, only recent material science advances made the fabrication of thin-®lm substrates possible whose material quality is comparable to bulk wafers. SIMOX wafers bene®tted from lowering the oxygen dose needed for ion-beam synthesis of buried oxide layers and optimisation of the thermal annealing cycles. Through improved thinning technologies, the wafer-direct-bonding approach for the burial of thermal oxide layers became competetive for thin-®lm SOI, especially when complemented with the salvaging of the``sacri®cial'' wafer. 7

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A “smarter-cut” approach to low temperature silicon layer transfer

Abstract: Articles you may be interested inHydrogen implantation-induced layer transfer of silicon using direct wafer bonding AIP Conf. Proc. 1512, 690 (2013); 10.1063/1.4791225Effects of hydrogen implantation temperature on ion-cut of silicon

Cited by 109 publications

References 7 publications

Wafer Bonding and Layer Splitting for Microsystems

Wafer Bonding and Layer Splitting for Microsystems

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Silicon-on-insulator: materials aspects and applications

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