A solution-processed La–Zr–O dielectric at a low temperature for high-performance In-Ga-O transistors: Engineering a precursor solution

Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors

“…The relatively high O H sub-peak intensity may be attributed to the presence of organic solvent residues. [24]. The intensity of the C 1 peak was considerably higher in the ZTO thin film pre-annealed at RT than that of the films obtained at other temperatures.…”

“…The μsat and SS values of the devices were extracted using Equations ( 1) and ( 2), respectively. [24]. The intensity of the C 1 peak was considerably higher in the ZTO thin film pre-annealed at RT than that of the films obtained at other temperatures.…”

“…Figure 3d-f show the C 1s XPS spectra of the ZTO thin film pre-annealed at RT, 120 °C, and 220 °C, respectively. The C 1s peaks were deconvoluted into four subpeaks centered at 284.4, 285.9, 287.3, and 289.4 eV, which were attributed to C-C/C-H, C-O, C〓O, and O-C〓O, respectively[24]. The intensity of the C 1 peak was considerably higher in the ZTO thin film pre-annealed at RT than that of the films obtained at other temperatures.…”

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

“…75 In addition, the peaks at 285.9 eV, 288.4 eV, and 289.5 eV, corresponding to CO 3 2− , CO/C–OH, O–CO bonds, are associated with organic solvent residues. 76,77 Since the CO-related bonds also serve as defect sites in the bandgap that can induce the light absorption, 78 it is highly expected that IGZO with additives, which showed a decrease in trap states and organic solvent residues, can be utilized as a UV phototransistor that is immune to visible light.…”

In situphotogenerated hydroxyl radicals in the reaction atmosphere for the accelerated crystallization of solution-processed functional metal oxide thin films

“…These radicals activated the polycondensation and densification of amorphous In–Zn–O (IZO) thin film transistors at moderate temperatures. Lee et al 10 introduced hydrogen peroxide (H 2 O 2 ) loading as an oxidizing agent during the formulation of La x Zr y O z (LZO) precursor solutions. The combination of H 2 O 2 and UV-irradiation in the spin-cast samples made possible the preparation of amorphous LZO films directly on polyimide substrates.…”