A STRIDE towards practical 3-D device simulation-numerical and visualization considerations

Wu, Kechih; Chin, G.; Dutton, R.W.

doi:10.1109/43.85759

Cited by 23 publications

(6 citation statements)

References 14 publications

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“…2(b) and (c) shows the electrostatic potential contours around the region under the respective injecting conditions of Case A and Case B. It is clear that Case B has more potential contours and hence is more robust (i.e., has a higher latchup trigger current by nearly twice that for Case A [22].…”

Section: Technology Scaling and Evolution Of Tcadmentioning

confidence: 99%

“…At the same time, it is specifically the complex and distributed nature of structures that requires extensive gridding and more robust numerical analysis techniques in order to handle the computational complexity. Progress in high-performance computation (HPC) has moved from the exotic parallel computers in the early 1990s [22] into a regime where sustainable bandwidth and computational power of clusters of workstations is now outrunning the robustness (and scalability) of the application tools. Fig.…”

Section: Technology Scaling and Evolution Of Tcadmentioning

confidence: 99%

“…Fig. 2 gives a sample problem, solved in the early 1990s using parallel computation [22], for CMOS latchup. Fig.…”

Section: Technology Scaling and Evolution Of Tcadmentioning

confidence: 99%

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Perspectives on technology and technology-driven CAD

Dutton

Strojwas

2000

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-Computer-aided design (CAD) techniques are absolutely essential to harness the ever-increasing complexity of the microsystem design. Similarly, the technology CAD (TCAD) tools played a key role in the development of new technology generations. Although there is a common belief that the TCAD tools have been trailing the technology development, the situation has been changing very significantly especially over the last decade. For the deep submicrometer (DSM) devices, these tools provide a better insight than any measurement techniques and they have become indispensable in the new device creation. Moreover, these tools after calibration to a relatively small number of experiments, exhibit very impressive predictive power, which is utilized to speed up the technology integration and transfer to volume manufacturing. This results in very manufacturable high-yielding products that can be ramped up much faster than in the past decade, which is absolutely necessary given the huge costs of integrated circuit fabrication lines, short product lifecycles and penalties for being late to the market place. In this paper, we will present our perspective on the semiconductor technology development, and highlight the rapid growth of TCAD and its strategic use in semiconductor industry.

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Section: Technology Scaling and Evolution Of Tcadmentioning

confidence: 99%

Section: Technology Scaling and Evolution Of Tcadmentioning

confidence: 99%

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Perspectives on technology and technology-driven CAD

Dutton

Strojwas

2000

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…This application, SEMI, is a three-dimensional semiconductor device simulator that utilizes a parallelized threedimensional Poisson solver [8,17]. The simulation domain is approximated by an irregular three-dimensional grid that is decomposed into contiguous blocks that are allocated to the processors.…”

Section: Applicationsmentioning

confidence: 99%

A quantitative study of parallel scientific applications with explicit communication

Cypher

Konstantinidou

et al. 1996

J Supercomput

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This paper studies the behavior of scientific applications running on distributed memory parallel computers. Our goal is to quantify the floating point, memory, I/O, and communication requirements of highly parallel scientific applications that perform explicit communication. In addition to quantit).ing these requirements for fixed problem sizes and numbers of processors, we develop analytical models for the effects of changing the problem size and the degree of parallelism for several of the applications.The contribution of our paper is that it provides quantitative data about real parallel scientific applications in a manner that is largely independent of the specific machine on which the application was run. Such data, which are clearly very valuable to an architect who is designing a new parallel computer, were not previously available. For example, the majority of research papers in interconnection networks have used simulated communication loads consisting of fixed-size messages. Our data, which show that using such simulated loads is unrealistic, can be used to generate more realistic communicalion loads.

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“…In [3], the success of MSP scheme, in MOSFET simulation, was attributed to the fact that the coupling between Poisson and continuity equation is largely local, specifically, the mobile carrier concentration for a spatial point in the inversion layer is determined mainly by the local electrostatic potential. For bipolar transistors, the main carrier concentration in base and collector, electrons in npn transistor, is not so much determined by the local electrostatic potential, but rather by the injection level at the emitter-base junction.…”

Section: Discussionmentioning

confidence: 99%

Further improvements in decoupled methods for semiconductor device modeling

Obrecht

Heasell

Elmasry

et al.

Proceedings of International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits: NUPAD V

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Two complementary techniques for accelerating the Gummel iterations are successfully combined to yield an efficient and robust. decoupled nonlinear solution method for semiconductar device simulation. The reasons for this success are explored. The effectiveness of the new method under high level injection, and its robustness in the presence of large time or bias steps should pave the way to its widespread application in multidimensional semiconductor device simulation.

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A STRIDE towards practical 3-D device simulation-numerical and visualization considerations

Cited by 23 publications

References 14 publications

Perspectives on technology and technology-driven CAD

Perspectives on technology and technology-driven CAD

A quantitative study of parallel scientific applications with explicit communication

Further improvements in decoupled methods for semiconductor device modeling

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