A study of Gaussianity and stationarity of noise in gas-sensitive SnO2 films

Abstract

541.183Chemisorption processes significantly influence the surface states of semiconductor films. It is assumed that these processes should also influence electric-current noise generated by the semiconductor structure. We study stationarity and Gaussianity of the resistance fluctuations of semiconductor gas sensors. It is shown that Gaussianity and stationarity of noise are shown as functions of the gas-phase composition and temperature. On this basis, we conclude that it is in principle possible to increase the selectivity of gas sensors by jointly measuring their sensor and noise characteristics.

Noise of semiconductor gas sensors in response to a sharp change in the composition of the gaseous phase

“…The prior studies [1][2][3] show the influence of chemisorption on the spectral and statistical characteristics of low-frequency current noise of metal-oxide gas-sensitive structures (GSSs). In [1][2][3], the noise characteristics of the GSSs were measured [4] after a long (over 3-4 h) holding in the analyzed gaseous mixture [5].…”

“…In [1][2][3], the noise characteristics of the GSSs were measured [4] after a long (over 3-4 h) holding in the analyzed gaseous mixture [5]. In this paper, we study the GSS noise immediately after a change in the composition of the gaseous phase, namely, when pronounced nonstationarity was observed in the GSS noise.…”