A Study of Nitrogen Incorporation during the Oxidation of Si(100) in  N 2 O  at High Temperatures

Abstract

The oxidation of Si(100) in N20 has been studied at temperatures in the range from 950 to 1200°C using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. During oxidation N became incorporated into the oxide film, the amount increasing with increasing temperature to 1100°C and then falling to a lower value at 1200°C. The N was concentrated as a thin N-rich layer near the SiOrSi interface inhibiting the influx of oxidant, leading to a reduction in the extent of oxidation compared with that in pure 02. The oxidant species is believed to be NO, which is stable under the conditions of the experiments. The N-rich phase was shown to have a composition of Si3N4 surmounted by N-rich oxynitride.

Self-diffusion and impurity diffusion in silicon dioxide

“…[5] The present work investigates the mechanism of Si selfdiffusion and B diffusion in SiO 2 , and the effect of N on the diffusion. The authors observe Si self-diffusion and B dif-fusion in 28 SiO 2 samples implanted with 30 Si and B, and, based on the simulation, show that SiO is the diffusing species that mainly governs the diffusion in SiO 2 . In addition, the enhancement of SiO diffusion by the existence of high-concentration B is described.…”

“…An isotopically enriched 28 Si single-crystal epilayer was thermally oxidized in dry O 2 at 1100°C to form 28 SiO 2 of thicknesses of 200, 300, and 650 nm. The samples were implanted with 30 Si at 50 keV to a dose of 2 × 10 15 cm −2 and were capped with a 30 nm thick Si nitride layer by radio frequency (rf) magnetron sputtering.…”

“…In Eq 7, C 28 SiO (x,t) depends on the depth and annealing times, which will be described below. The boundary condition for 28 SiO at the 28 Si-28 SiO 2 interface is given by C 28 SiO(x‫ס‬interface) ‫ס‬ C SiO max to describe the generation of SiO at the interface. The amount of 30 SiO arriving at the 28 Si-28 SiO 2 interface is so small that the mixing of 28 Si with 30 Si at the interface is neglected.…”

“…The boundary condition for 28 SiO at the 28 Si-28 SiO 2 interface is given by C 28 SiO(x‫ס‬interface) ‫ס‬ C SiO max to describe the generation of SiO at the interface. The amount of 30 SiO arriving at the 28 Si-28 SiO 2 interface is so small that the mixing of 28 Si with 30 Si at the interface is neglected. The boundary condition at the nitride-capped surface is represented by a zero-flux condition because the cappings act as barriers.…”

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

“…The variation in the film thickness can also be determined this way; in [121], many spikes were observed on the rough surface of the films. The stress of SiO X N Y films was calculated from the curvature of coated Si(100) wafers, which can be measured by profilometry [99,136,176]. This allows the evaluation of the average stress throughout the whole film.…”