This paper presents a degenerated injector (mixer) with transconductance boosted by biasing the mixer transistor in the knee region of its I-V curve, without increasing the transistor size and its parasitics. This mixer can enhance the locking range of millimeter-wave injection-locked frequency dividers. To compensate the degradation of mixer transconductance (conversion-gain) due to the degeneration effect, a neutralization technique is employed. Analyses are given for locking-range and induced phase-noise of the proposed divider for arbitrary injection strength. It is shown that the locking-range, as a function of injection strength, is improved by increasing the fundamental component of transconductance. Using 180-nm CMOS technology, a 1.78-mW divider-bytwo is designed with free-running frequency of 27.92 GHz, locking-range of 51 to 59.6 GHz, and figure-of-merit of 4.83 (GHz/mW). EM simulation results of the proposed and conventional structure are compared, which illustrates 56% improvement in locking-range.