“…Ferroelectric HfO 2 thin film has been investigated with various fabrications for applications because of their scalability and compatibility with the traditional complementary metal-oxide-semiconductor [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 ]. Particularly for reliability in applications such as memory devices and negative capacitance devices, the evolution of the P – V hysteresis loop has been studied during polarization switching cycles [ 14 , 15 , 16 , 17 ].…”