A Study on the CMP of Lithium Tantalate Wafer

Lee, Hyunseop; Park, Boum-Young; Seo, Heondeok; Chang, O.M.; Jeong, Haedo

doi:10.3795/ksme-a.2005.29.9.1276

Cited by 4 publications

(1 citation statement)

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“…However, they did not mention the concentration effect of H 2 O 2 in the KOH based solution. Our previous study [9] showed that the silica slurry is more suitable for the LiTaO 3 CMP than the ceria slurry, however, the study on an additive that accelerates material removal rate in the LiTaO 3 CMP is still weak in the previous reports. Citric acid (C 6 H 8 O 7 ) has been used in a metal CMP slurry as a complexing or chelating agent, which removes metal ions from the wafer surface [10][11].…”

Section: Introductionmentioning

confidence: 96%

Effect of Citric Acid in Chemical Mechanical Polishing (CMP) for Lithium Tantalate (LiTaO<sub>3</sub>) Wafer

Lee

2016

AMR

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Lithium tantalate (LiTaO3) has piezoelectric, electro-optical and nonlinear optical characteristics, and a wide transparency range going from ultraviolet to infrared. It is desirable that LiTaO3 wafer was a smooth surface in order to function with good quality. Chemical mechanical polishing (CMP) has been used to planarize integrated circuits (ICs) or obtain a high surface quality of the substrates. This paper investigates the effect of citric acid as an additive in the slurry for LiTaO3 CMP. The roughness of the wafers was measured by an atomic force microscopy (AFM, XE-100) after polishing. The slurry, which contains citric acid as an additive, has a higher material removal rate and friction force than a slurry without an additive. After polishing, the surface roughness of the LiTaO3 wafer can be reduced down to 1.7Å of Ra.

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Section: Introductionmentioning

confidence: 96%