2008
DOI: 10.1109/tmtt.2007.913366
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A Subthreshold Low-Noise Amplifier Optimized for Ultra-Low-Power Applications in the ISM Band

Abstract: A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band. IEEE Transactions on Microwave Theory and Techniques, 56(2), 286-292.

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Cited by 64 publications
(34 citation statements)
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“…These networks were only tuned once before performing all of the main measurements and were not re-tuned for different power states. Transistors M 1 -M 4 are biased in the weak-inversion region [20], which has been shown to offer improved performance in the low GHz frequency range as compared to strong-inversion biasing. One way of accessing a transistor's overall performance is by looking at its maximum unilateral transducer gain, G TUmax [21].…”
Section: 1mentioning
confidence: 99%
See 1 more Smart Citation
“…These networks were only tuned once before performing all of the main measurements and were not re-tuned for different power states. Transistors M 1 -M 4 are biased in the weak-inversion region [20], which has been shown to offer improved performance in the low GHz frequency range as compared to strong-inversion biasing. One way of accessing a transistor's overall performance is by looking at its maximum unilateral transducer gain, G TUmax [21].…”
Section: 1mentioning
confidence: 99%
“…However, it should be remembered that this impedance matching does not power match the device, and hence does not maximize the power output of the device. In cases where impedance matching is necessary, but a very low NF is not critical, impedance matching can be achieved by simply directly adding a resistor in series with the gate [20] and resonating out the gate-source capacitance as is done in Fig. 6.…”
Section: 1mentioning
confidence: 99%
“…Input matching is achieved using a series resonant network with a resistor in series. Under matched conditions, the noise figure of the matching network is 3 dB [12], and the voltage gain of the matching network is equal to the quality factor (Q) of the network. In this work, an 11.5 nH inductor was used resulting in a Q of 3.54 and a voltage gain of 11 dB.…”
Section: A the Lna And Mixersmentioning
confidence: 99%
“…In most WSN LNA designs [4][5][6], MOSFETs are usually biased in the sub-threshold region, which provides large transconductance and only consumes little power. Nevertheless, in sub-threshold region, MOSFETs produce more noise and nonlinear harmonics.…”
Section: Introductionmentioning
confidence: 99%