A systematic analysis of defects in ion-implanted silicon

Jones, K. S.; Prussin, S.G.; Weber, E. R.

doi:10.1007/bf00618760

Cited by 513 publications

(244 citation statements)

References 91 publications

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“…Although hydrostatic stress is generally not engineered into the systems of interest, the implantation process itself can generate complex and transiently varying stress fields that depend in a complex fashion on the implant dose, type, and energy. 29,57,58 Future work in this area might be required to determine whether the stresses arising from implantation and damage annealing can influence the clustering process. On the other hand, biaxial and uniaxial stress fields are more common and further work will be required to characterize the effect of these fields on self-interstitial clustering.…”

Section: B Higher Temperatures With No Compressionmentioning

confidence: 99%

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

2010

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We analyze results generated by large-scale molecular-dynamics simulations of self-interstitial clusters in crystalline silicon using a recently developed computational method for probing the thermodynamics of defects in solids. In this approach, the potential-energy landscape is sampled with lengthy moleculardynamics simulations and repeated energy minimizations in order to build distribution functions that quantitatively describe the formation thermodynamics of a particular defect cluster. Using this method, a comprehensive picture for interstitial aggregation is proposed. In particular, we find that both vibrational and configuration entropic factors play important roles in determining self-interstitial cluster morphology. In addition to the expected role of temperature, we also find that applied (hydrostatic) pressure and the commensurate lattice strain greatly influence the resulting aggregation pathways. Interestingly, the effect of pressure appears to manifest not by altering the thermodynamics of individual defect configurations but rather by changing the overall energy landscape associated with the defect. These effects appear to be general and are predicted using multiple, well-tested, empirical interatomic potentials for silicon. Our results suggest that internal stress environments within a silicon wafer (e.g., created by ion implantation) could have profound effects on the observed selfinterstitial cluster morphology. We analyze results generated by large-scale molecular-dynamics simulations of self-interstitial clusters in crystalline silicon using a recently developed computational method for probing the thermodynamics of defects in solids. In this approach, the potential-energy landscape is sampled with lengthy molecular-dynamics simulations and repeated energy minimizations in order to build distribution functions that quantitatively describe the formation thermodynamics of a particular defect cluster. Using this method, a comprehensive picture for interstitial aggregation is proposed. In particular, we find that both vibrational and configuration entropic factors play important roles in determining self-interstitial cluster morphology. In addition to the expected role of temperature, we also find that applied ͑hydrostatic͒ pressure and the commensurate lattice strain greatly influence the resulting aggregation pathways. Interestingly, the effect of pressure appears to manifest not by altering the thermodynamics of individual defect configurations but rather by changing the overall energy landscape associated with the defect. These effects appear to be general and are predicted using multiple, well-tested, empirical interatomic potentials for silicon. Our results suggest that internal stress environments within a silicon wafer ͑e.g., created by ion implantation͒ could have profound effects on the observed selfinterstitial cluster morphology. Disciplines Biochemical and Biomolecular Engineering | Chemical Engineering | Engineering

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Section: B Higher Temperatures With No Compressionmentioning

confidence: 99%

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

2010

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“…Intrinsic dislocation loops are created during postimplantation annealing, when shallow level vacancies which accompany deep level interstitials coagulate. 25 While vacancies by themselves usually anneal out of implanted silicon at temperatures around 550°C, if dislocation loops form they can be stable up to 800°C. 25 As with RBS, the cut depth of samples analyzed using XTEM ranged between 475 and 500 nm.…”

Section: Resultsmentioning

confidence: 99%

“…25 While vacancies by themselves usually anneal out of implanted silicon at temperatures around 550°C, if dislocation loops form they can be stable up to 800°C. 25 As with RBS, the cut depth of samples analyzed using XTEM ranged between 475 and 500 nm. Figure 5 demonstrates the condition of the surface of a typical transferred layer in this work.…”

Section: Resultsmentioning

confidence: 99%

Microwave enhanced ion-cut silicon layer transfer

Thompson¹,

Alford²,

Mayer³

et al. 2007

Journal of Applied Physics

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Polycrystalline silicon layer transfer by ion-cut Appl. Phys. Lett. 82, 1544Lett. 82, (2003 Microwave heating has been used to decrease the time required for exfoliation of thin single-crystalline silicon layers onto insulator substrates using ion-cut processing. Samples exfoliated in a 2.45 GHz, 1300 W cavity applicator microwave system saw a decrease in incubation times as compared to conventional anneal processes. Rutherford backscattering spectrometry, cross sectional scanning electron microscopy, cross sectional transmission electron microscopy, and selective aperture electron diffraction were used to determine the transferred layer thickness and crystalline quality. The surface quality was determined by atomic force microscopy. Hall measurements were used to determine electrical properties as a function of radiation repair anneal times. Results of physical and electrical characterizations demonstrate that the end products of microwave enhanced ion-cut processing do not appreciably differ from those using more traditional means of exfoliation.

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“…The major drawback is that secondary defects, extrinsic interstitial dislocations, may form during the thermal treatment required to anneal out the implant damage and activate the dopants [2][3][4][5][6]. These secondary defects can be detrimental to device performance.…”

Section: Introductionmentioning

confidence: 99%

“…These secondary defects can be detrimental to device performance. Therefore, much effort has been put into determining when or how these dislocations form [4,[6][7][8][9]. In particular, it has been demonstrated for room temperature (RT) implants that dislocations are present after annealing only if more than a critical number of atoms have been displaced by the implant [6].…”

Section: Introductionmentioning

confidence: 99%

Time evolution of dislocation formation in ion implanted silicon

Liefting¹,

Custer²,

Saris³

1994

Materials Science and Engineering: B

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Annealing of crystal damage from ion implantation may restflt in dislocation formation. Here we study the nucleation, growth, and annihilation of such dislocations during rapid thermal anneals of Si, Ge, As, and In implanted Si. The dislocation formation process is observed for single or multiple damage profiles, as well as in amorphous-crystal transition regions. Dislocations initially nucleate in all these cases, even if they eventually annihilate during further annealing. It is also shown that for C implants in Si not only do dislocations not remain after annealing, but they do not even nucleate.

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A systematic analysis of defects in ion-implanted silicon

Cited by 513 publications

References 91 publications

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

Microwave enhanced ion-cut silicon layer transfer

Time evolution of dislocation formation in ion implanted silicon

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