Time evolution of dislocation formation in ion implanted silicon

Liefting, J.R.; Custer, J. S.; Saris, F. W.

doi:10.1016/0921-5107(94)90202-x

Cited by 15 publications

(5 citation statements)

References 14 publications

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“…We have previously demonstrated the ability of substitutional carbon in suppressing indium EOR with implantation conditions similar to the halo region of the nMOSFET [10]. There is a similarity [9][10][11][12] in these previous experiments where the thermal anneals involves high temperatures of at least 900 -C.…”

Section: Introductionmentioning

confidence: 86%

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Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Tan¹,

Chor²,

Lee³

et al. 2006

Thin Solid Films

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Section: Introductionmentioning

confidence: 86%

“…This property is further augmented with the observation of secondary end-ofrange (EOR) defects elimination [9][10][11][12]. We have previously demonstrated the ability of substitutional carbon in suppressing indium EOR with implantation conditions similar to the halo region of the nMOSFET [10].…”

Section: Introductionmentioning

confidence: 91%

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Tan¹,

Chor²,

Lee³

et al. 2006

Thin Solid Films

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Section: £äçAeçðëçunclassified

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Section: £äçAeçðëçunclassified

Defect-impurity engineering in implanted silicon

Chelyadinskii¹,

Комаров²

2003

Usp. Fiz. Nauk

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ÑÃÓÂÊÑÏ:¬ÂÍ ÔÎÇAEÖÇÕ ËÊ ÖÓÂÄÐÇÐËâ (5), ÒÇÕÎË Ô ÓÂAEËÖÔÑÏ r`" r ËÏÇáÕ ÕÇÐAEÇÐÙËá Í ÔÑÍÓÂÜÇÐËá, ÕÑÅAEÂ ÍÂÍ AEÎâ r b " r ÐÂÃÎáAEÂÇÕÔâ ÓÑÔÕ ÒÇÕÎË. ±ÇÕÎË Ô ÓÂAEËÖÔÑÏ r " r ÐÇ ÓÂÔÕÖÕ Ë ÐÇ ÔÑÍÓÂÜÂáÕÔâ, ÐÑ ÒÑÔÎÇ ËÔÚÇÊÐÑÄÇÐËâ ÒÇÕÇÎß ÏÂÎÑÅÑ ÓÂAEËÖÔÂ ÄÇÎËÚËÐÂ " r ÖÄÇÎËÚËÄÂÇÕÔâ.ªÐÕÇÅÓËÓÑÄÂÐËÇ ÄÞÓÂÉÇÐËâ (5) ÄÇAEÇÕ Í àÄÑÎáÙËË ÍÄÂAEÓÂÕÂ ÔÓÇAEÐÇÅÑ ÓÂAEËÖÔÂ ÒÇÕÇÎß ÄÑ ÄÓÇÏÇÐË. ¿ÕÑÕ ÓÑÔÕ ÊÂÒËÔÞÄÂÇÕÔâ ÔÎÇAEÖáÜËÏ ÑÃÓÂÊÑÏ [81]:£ ÔÎÖÚÂÇ, ÍÑÅAEÂ ÒÓÑÙÇÔÔ ÓÑÔÕÂ ÒÇÕÎË ÍÑÐÕÓÑÎËÓÖÇÕÔâ ÄÇÎËÚËÐÑÌ ÃÂÓßÇÓÂ ÐÂ ÍÎÂÔÕÇÓÇ, ÔÍÑÓÑÔÕß ÖÍÓÖÒÐÇÐËâ K K r ÊÂAEÂÇÕÔâ ÔÎÇAEÖáÜËÏ ÑÃÓÂÊÑÏ: £ÞÓÂÉÇÐËÇ (13) t ì ËÐÍÖÃÂÙËÑÐÐÑÇ ÄÓÇÏâ: JnY xY t gn À 1Y xY t f n À 1Y xY t À dnY xY t f nY xY t Y 22ÅAEÇ f nY xY t ì ÍÑÐÙÇÐÕÓÂÙËâ ÒÓÇÙËÒËÕÂÕÑÄ, ÔÑAEÇÓÉÂÜËØ n ÂÕÑÏÑÄ ÍËÔÎÑÓÑAEÂ; gnY xY t Ë dnY xY t ì ÔÍÑÓÑÔÕË ÓÑÔÕÂ Ë ÓÂÔÕÄÑÓÇÐËâ ÒÓÇÙËÒËÕÂÕÂ ÔÑÑÕÄÇÕÔÕÄÇÐÐÑ. ±ÓÇÙËÒË-ÕÂÕÞ ÏÑÅÖÕ AEÑÔÕËÅÂÕß ÓÂÊÏÇÓÑÄ Ä ÐÇÔÍÑÎßÍÑ ÔÑÕ ÐÂÐÑ-ÏÇÕÓÑÄ, Ä ÓÇÊÖÎßÕÂÕÇ àÕÑÅÑ ÍÑÎËÚÇÔÕÄÑ ÔÍÑÓÑÔÕÐÞØ ÖÓÂÄ-ÐÇÐËÌ ÔÕÂÐÑÄËÕÔâ ÐÇAEÑÒÖÔÕËÏÑ ÃÑÎßÛËÏ. ±ÑàÕÑÏÖ ÖÓÂÄ-ÐÇÐËâ (21) Ë (22) ÕÓÂÐÔ×ÑÓÏËÓÖáÕÔâ Ä AEË××ÇÓÇÐÙËÂÎßÐÑÇ ÖÓÂÄÐÇÐËÇ ¶ÑÍÍÇÓÂ ë ±ÎÂÐÍÂ:±ÑÔÍÑÎßÍÖ AEË××ÇÓÇÐÙËÂÎßÐÑÇ ÖÓÂÄÐÇÐËÇ (23) ÐÇ AEÇÌÔÕÄË-ÕÇÎßÐÑ AEÎâ ÏÂÎÞØ ÒÓÇÙËÒËÕÂÕÑÄ, ÕÑ Ä ÒÓÇAEÔÕÂÄÎâÇÏÑÌ ÏÑAEÇÎË ËÔÒÑÎßÊÖáÕÔâ ÔÑÄÏÇÔÕÐÑ ÔÍÑÓÑÔÕÐÞÇ ÖÓÂÄÐÇÐËâ AEÎâ ÏÂÎÞØ ÒÓÇÙËÒËÕÂÕÑÄ n`20 Ë AEË××ÇÓÇÐÙËÂÎßÐÑÇ ÖÓÂÄÐÇÐËÇ (23) AEÎâ ÃÑÎßÛËØ. ±ÓÇAEÒÑÎÂÅÂÇÕÔâ, ÚÕÑ ÒÓÇ-ÙËÒËÕÂÕÞ âÄÎâáÕÔâ ÐÇÒÑAEÄËÉÐÞÏË. ¥Îâ ÑÕAEÇÎßÐÞØ ÂÕÑÏÑÄ ÍËÔÎÑÓÑAEÂ ÊÂÒËÔÞÄÂÇÕÔâ AEÑÒÑÎÐËÕÇÎßÐÑ ÔÎÇAEÖá-ÜÇÇ ÖÓÂÄÐÇÐËÇ: ÅAEÇ G ac ì ÔÄÑÃÑAEÐÂâ àÐÇÓÅËâ ÂÍÕËÄÂÙËË; G n ì ÔÄÑÃÑAEÐÂâ àÐÇÓÅËâ ¤ËÃÃÔÂ ÒÓÇÙËÒËÕÂÕÂ, ÔÑAEÇÓÉÂÜÇÅÑ n ÂÕÑÏÑÄ ÍËÔÎÑÓÑAEÂ, ÍÑÕÑÓÂâ ÊÂÒËÔÞÄÂÇÕÔâ ÍÂÍ ÔÖÏÏÂ ÑÃÝÇÏÐÑÌ Ë ÒÑÄÇÓØÐÑÔÕÐÑÌ àÐÇÓÅËË Conf. The basic results of the studies of defect-impurity interaction in implanted silicon are presented. The factors affecting the way quasichemical reactions proceed ì namely, the temperature, the level of ionization, and internal electric and elastic-stress éelds ì are analyzed. Methods for suppressing residual damage effects (rod-like defects, dislocation loops), and schemes for reducing impurity diffusivity and gettering metallic impurities in implanted silicon are considered. Examples of the practical realization of defect-impurity engineering are presented and discussed.

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“…Though damage created by heavy ion implantation in semiconductors is being studied extensively 1 at present by many techniques including electron microscopy 2,3 and Rutherford backscattering spectrometry, 4 there are few studies on characterization of electrically active defects. 5,6 Recently, the study of point defects generated by MeV ions in silicon has drawn considerable attention since they seem to play a vital role in structural relaxation of the damaged layer, 7 extended defect formation on annealing, 8 and electrical activation of dopants. 9 Though there have been many studies involving conventional dopant ions such as B, P, As, etc., electrically active defects induced by high energy Ar ϩ implantation is less understood, especially in p-type Si.…”

Section: Introductionmentioning

confidence: 99%

Electrically active defects in as-implanted, deep buried layers in p-type silicon

Giri

Dhar

Kulkarni

et al. 1997

Journal of Applied Physics

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We have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy ͑DLTS͒ and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode ͑CC-TATS͒. We show that CC-TATS is a more reliable method than DLTS for characterization of the heavily damaged buried layers. The major trap produced in the buried layers in p-type Si by MeV Ar ϩ implantation is found to have an energy level at E v ϩ0.52 eV. This trap, believed to be responsible for compensation in the damaged layer, shows exponential capture dynamics. We observed an unusually high thermal activation energy for capture, which is attributed to a macroscopic energy barrier for carriers to reach the buried layer. We observe two other majority carrier traps, and also a minority carrier trap possibly due to inversion within the depletion layer.

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Time evolution of dislocation formation in ion implanted silicon

Cited by 15 publications

References 14 publications

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Defect-impurity engineering in implanted silicon

Electrically active defects in as-implanted, deep buried layers in p-type silicon

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