Electrically active defects in as-implanted, deep buried layers in <i>p</i>-type silicon

Giri, P. K.; Dhar, S.; Kulkarni, V. N.; Mohapatra, Y. N.

doi:10.1063/1.363992

Cited by 9 publications

(3 citation statements)

References 24 publications

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“…Any isothermal transient spectroscopic technique will be more powerful to analyze such phenomena. We have recently demonstrated the use of TATS, an isothermal spectroscopic technique, in understanding the trapping kinetics of defects in heavily damaged silicon 28,29 and the DX center in Al x Ga 1Ϫx As. 6 Model of Fig.…”

Section: Discussion On Model Distinctionmentioning

confidence: 99%

Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon

Giri

Mohapatra

2000

Phys. Rev. B

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We have considered five different models of charge transfer among coupled defect states in semiconductors where the free-carrier density is limited by the density of unoccupied trap levels, as in the case of defectdominated materials. To determine the time dependence of the trap occupancy features, we formulate a set of coupled differential equations that govern charge capture and emission processes for two defect states. A numerical solution assuming model parameters for traps provides features of the trap occupancy as a function of time. A critical comparison is made in occupancy features for different models, primarily categorized as serial ͑hierarchical͒ and parallel mechanisms of charge transfer. The model predictions are successfully applied to a study of trapping kinetics of defects observed in heavily damaged n-type silicon. We show that, in addition to the occurrence of charge redistribution among multiple traps, the major trap in the damaged silicon exists in two metastable configurations, perhaps with negative U ͑Hubbard correlation energy͒, and the stable configuration refers to a midgap compensating center related to a small cluster of self-interstitials. The applicability of our model simulations can be extended to more complex defect systems using a combination of these simple models.

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Section: Discussion On Model Distinctionmentioning

confidence: 99%

Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon

Giri

Mohapatra

2000

Phys. Rev. B

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“…Most of the defects created in plasma etched Si are readily identified with other defects already reported in the literature. For instance, HP1 has a similar 'signature' to a defect, as yet of unknown structure, reported in [83,84]. HP3 and HP4 are commonly attributed to the B-O centre [85] and the divacancy [86].…”

Section: Defects In Ar Ion Sputter Etched Strained P-type Si 1−mentioning

confidence: 99%

Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Deenapanray

Auret

2003

J. Phys.: Condens. Matter

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Ion implantation and plasma processing techniques are routinely used for the fabrication of semiconductor devices. In particular, these techniques employ low energy ions, which modify the electrical and optical properties of the semiconductor material, and, consequently, of the devices that are fabricated thereon, by creating defects in the semiconductor lattice. In this paper, we review our results on the electrical characterization of defects created in Si by low energy noble gas ions (He, Ne, and Ar) and hydrogen ions using deep level transient spectroscopy. The properties of defects introduced in Si 1−x Ge x during ion etching and electron beam evaporation of metal contacts are also reviewed.

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“…The peak marked HP1 in figure 1 has an activation energy of 0.55 ± 0.005 eV and a capture cross section of 3.8×10 −13 cm 2 . A defect with similar DLTS 'signatures' was detected [11,12]; however, the structure is as yet unresolved. Defects HP4 and HP3 correspond to hole traps commonly attributed to the divacancy [13] and B-O [14] centres, respectively.…”

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confidence: 96%

Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma

Mamor

Auret

Willander

et al. 1999

Semicond. Sci. Technol.

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We have used deep-level transient spectroscopy in an investigation of the electronic properties of defects introduced in boron-doped, strained p-type Si 1−x Ge x alloys with x = 0 and 0.05, during argon plasma sputter etching. These defects are compared with those introduced during electron beam deposition of metal contacts and after 5.4 MeV α particle irradiation. Four defects with discrete energy levels, ranging from 0.22 eV to 0.55 eV above the valence band, were introduced in p-Si during sputtering. The most prominent defect, detected in Ar plasma etched samples, has similar electronic properties to those of the defects detected after electron and α particle irradiation. The main defects detected in p-Si were also observed in p-Si 0.95 Ge 0.05 . One of the dominating peaks has been correlated with the interstitial carbon-interstitial oxygen pair. The decrease in activation energy of this defect with increasing Ge content from x = 0 to 0.05 is found to follow the same variation as the bandgap of strained Si 1−x Ge x /Si. The energy level position of the defect, relative to the conduction band, is therefore the same for x = 0 and 0.05 indicating that such a level is pinned to the conduction band.

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Electrically active defects in as-implanted, deep buried layers in p-type silicon

Cited by 9 publications

References 24 publications

Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon

Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon

Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma

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