Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma

Mamor, M.; Auret, F.D.; Willander, Magnus; Goodman, S. A.; Myburg, G.; Meyer, F.

doi:10.1088/0268-1242/14/7/304

Cited by 13 publications

(9 citation statements)

References 17 publications

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“…In section 3.3 we will discuss the electrical properties of defects created in strained p-type Si 1−x Ge x following low energy (0.4 keV) sputter etching [34,35], and by electron beam evaporation of metal contacts on the surface of the semiconductor [35,36]. Although we have previously investigated the creation of defects in partially relaxed n-type Si 1−x Ge x epitaxial layers by low energy NGI bombardment [37][38][39], those results are not reviewed here.…”

Section: Introductionmentioning

confidence: 99%

Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Deenapanray

Auret

2003

J. Phys.: Condens. Matter

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Ion implantation and plasma processing techniques are routinely used for the fabrication of semiconductor devices. In particular, these techniques employ low energy ions, which modify the electrical and optical properties of the semiconductor material, and, consequently, of the devices that are fabricated thereon, by creating defects in the semiconductor lattice. In this paper, we review our results on the electrical characterization of defects created in Si by low energy noble gas ions (He, Ne, and Ar) and hydrogen ions using deep level transient spectroscopy. The properties of defects introduced in Si 1−x Ge x during ion etching and electron beam evaporation of metal contacts are also reviewed.

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Section: Introductionmentioning

confidence: 99%

Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Deenapanray

Auret

2003

J. Phys.: Condens. Matter

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“…Figure 8 compares the defects created in Si 0.947 Ge 0.053 (a) by Er implantation, (b) after electron beam deposition (EBD) of Scandium (no shielding of secondary electrons) [27], and (c) by 5.4 MeV alpha particle irradiation [27]. The electron fluence on the Si 1-x Ge x sample was estimated by measuring the current through the sample holder during EBD.…”

Section: B Electrical Characterizationmentioning

confidence: 99%

Defect production in strained p-type Si1−xGex by Er implantation

Mamor

Pipeleers

Auret

et al. 2011

Journal of Applied Physics

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Strained p-Si 1-x Ge x (x = 5.3%, 10.2% and 15.4%) was irradiated at room temperature with 160 keV 166 Er 2+ ions to a fluence of 1×10 10 or 3×10 13 Er/cm 2 . The defects induced by ion implantation were investigated experimentally using high-resolution X-ray diffraction, Rutherford backscattering and channeling spectroscopy and deep level transient spectroscopy. X-ray diffraction indicates that the damage induced by Er implantation produces a slight perpendicular expansion of the SiGe lattice. For all compositions, channeling measurements reveal that Er implantation in pSi 1-x Ge x to a fluence of 3×10 13 Er/cm 2 induces an amorphous region below the Si 1-x Ge x surface.Annealing at 850°C for 30 s, results in a reduction in damage density, a relaxation of the implantation-induced perpendicular expansion of the SiGe lattice in the implanted region, while a more pronounced relaxation of the compressive strain SiGe is observed for higher Ge content (x = 0.10 and 0.15). On the other hand, for the annealed SiGe samples that were implanted with Er at the fluence of 10 10 Er/cm 2 , the compressive strain in the SiGe layer is nearly completely retained. Deep level transient spectroscopy studies indicate that two prominent defects with discrete energy levels above the valence band are introduced during Er implantation. Their activation energy was found to decrease with increasing Ge-content. However, the large local strain induced by high fluence Er implantation reduces the activation energy by 40 meV with respect to the low fluence Er implanted p-Si 1-x Ge x . This shift (40 meV) in the activation energy remains constant regardless of the Ge content, suggesting that the Si 1-x Ge x layers remained fully strained after Er implantation. The observed defects are further compared to those introduced by alpha particle irradiation and electron beam metal deposition. The results indicate that defects introduced by Er implantation have similar electronic properties as those of defects detected after electron beam deposition and alpha particle irradiation. Therefore, it is concluded that these defects are due to the Er implantation-induced damage and not to the Er species specifically.Electronic mail: mamor@squ.edu.om 2

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“…This has led to renewed interest in the complete understanding of metal-germanium interactions, and dynamic properties of radiation and process-induced defects in Ge because defects ultimately determine the performance of devices fabricated thereon [11]. These defects influence device performance and alter the barrier heights (BHs) of the contacts [12,13,14,15]. The defects responsible for these BH adjustments are introduced when energetic particles impinge on the semiconductor surface during device processing or during device operation in radiation environment [11].…”

Section: Introductionmentioning

confidence: 99%