Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Deenapanray, Prakash; Auret, F.D.

doi:10.1088/0953-8984/15/39/011

Cited by 3 publications

(2 citation statements)

References 86 publications

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“…40 The effects of thermal vibrations as well as zero point energy are treated by Herrero and Ramirez (2006), with some surprising results for the different sites and isotopes; these calculations are for the neutral centres only, however, and do not extend to the 0/+ or 0/− switching points. Curiously inconsistent with the Aarhus work, later DLTS studies of proton-bombarded Si by Deenapanray and Auret (2003) appear to reveal only vacancy and dopant-related centres.…”

Section: Electrical Activity In Siliconcontrasting

confidence: 56%

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

2009

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Although the interstitial hydrogen atom would seem to be one of the simplest defect centres in any lattice, its solid state chemistry is in fact unknown in many materials, not least amongst the elements. In semiconductors, the realization that hydrogen can profoundly influence electronic properties even as a trace impurity has prompted its study by all available means-but still only in the functionally important or potentially important materials-for the elements, Si, Ge and diamond. Even here, it was not studies of hydrogen itself but of its pseudo-isotope, muonium, that first provided the much needed microscopic pictures of crystallographic site and local electronic structure-now comprehensively confirmed by ab initio computation and such data as exists for monatomic, interstitial hydrogen centres in Si. Muonium can be formed in a variety of neutral paramagnetic states when positive muons are implanted into non-metals. The simple trapped atom is commonly only metastable. It coexists with or reacts to give defect centres with the unpaired electron in somewhat more extended orbitals. Indications of complete delocalization into effective mass states are discussed for B, α-Sn, Bi and even Ge, but otherwise all the muonium centres seen in the elemental semiconductors are deep and relatively compact. These are revealed, distinguished and characterized by µSR spectroscopy-muon spin rotation and resonance informing on sites and spin-density distributions, muon spin relaxation on motional dynamics and charge-state transitions.This Report documents the progress of µSR studies for all the semiconductors and semimetals of the p-block elements, Groups III-VI of the Periodic Table . The striking spectra and originally unanticipated results for Group IV are for the most part well known but deserve summarizing and updating; the sheer diversity of muonium states found is still remarkable, especially in carbon allotropes. The interplay of crystallographic site and charge state in Si and Ge at high temperatures, or under illumination, reflects the capture and loss of charge carriers that should model the electrical activity of monatomic hydrogen but still challenges theoretical descriptions. Spin-flip scattering of conduction electrons by the paramagnetic centres is revealed in heavily doped n-type material, as well as some modification of the local electronic structures. The corresponding spectroscopy for the solid elements of Groups III, V and VI is rather less well known and is reviewed here for the first time; a good deal of previously unpublished data is also included. Theoretical expectations and computational modelling are sparse, here. Recent results for B suggest a relatively shallow centre with molecular character; P and As show deeper quasi-atomic states, but still with substantial overlap of spin density onto surrounding host atoms. Particular attention is paid to the chalcogens. Muonium centres in Te show charge-state transitions already around room temperature; the identification of those in S and Se has been compli...

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Section: Electrical Activity In Siliconcontrasting

confidence: 56%

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

2009

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“…The controlled introduction of defects by ion-solid interaction and subsequent annealing is important in the quest for producing and characterizing, among others, nanovoids, e.g. higher order vacancy clusters like V n , where n > 2 [11]. Finally, we have successfully used Laplace DLTS to deconvolute signals of the H(0.37) and H(0.39) defects which are both present after annealing at above 400 o C.…”

Section: Discussionmentioning

confidence: 99%

Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo

Auret

Das²,

Nyamhere³

et al. 2005

SSP

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In this study we have investigated the thermal stability (in the range 100 oC - 900 oC) of defects introduced in p-Si by electron beam deposition (EBD) of Ti and Ti/Mo Schottky contacts. The depletion regions below these contacts were probed by conventional deep level transient spectroscopy (DLTS) as well as Laplace (high-resolution) DLTS (L-DLTS). We have chosen Ti as the Schottky contact because the barrier height of Ti/p-Si (0.53 eV) is close to that of TiSi2/p-Si (0.50 eV) that forms after annealing at 600 – 650 oC. The Mo was added on top of the Ti in order to prevent annealing degradation. These contacts were annealed in Ar at temperatures of up to 900 oC in 100 oC steps for half-hour periods. Current – voltage (I-V) and capacitance – voltage (C-V) measurements were used to monitor the quality of the Schottky contacts. DLTS was performed after each annealing cycle to monitor the presence of the EBD-induced defects and to obtain heir electronic properties. We have found that that the Ti/Mo contacts were superior to the Ti contacts. Their (Ti/Mo) barrier height after EBD was 0.52 eV and it gradually increased to 0.56 eV after annealing at 500 oC - 600oC and then dropped to 0.50 eV annealing at 700 oC. DLTS revealed that the main defects introduced during metallization are hole traps H(0.17), H(0.23), H(0.37) and H(0.49). Annealing at 350 oC introduced an additional hole trap H(0.39). After annealing at 550 oC all defects were removed from the depletion region.

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Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Cao

Ming

et al. 2019

J Mater Sci: Mater Electron

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Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

Cited by 3 publications

References 86 publications

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

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