A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p–Si/Si1−Ge /p–Si selectively doped double heterojunctions structures

Hionis, G.; Triberis, G. P.

doi:10.1006/spmi.1997.0466

Cited by 5 publications

(8 citation statements)

References 13 publications

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“…3(a), with the used parameters the effect due to 2S doping is weak, thus the mobility enhancement is due mainly to a reduction in the spacer thickness. Indeed, it was indicated that this reduction leads to an increase in carrier density (about twice), 8,45) so in mobility (about twice). 8 Fig.…”

Section: Mobility Enhancementmentioning

confidence: 97%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

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We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former is smaller than the latter for scattering from the bottom (substrate-side) interface. The mobility of a 2S-doped square QW exhibits a well-width evolution slower than the power-of-six law characteristic of the undoped QW. The mobility may be enhanced by 2S doping. We examine the dependence of the enhancement factor on QW parameters for optimization of the structure. This factor may achieve an order of magnitude, which is much larger than that provided by earlier methods. Our theory is able to reproduce recent experimental data on transport in 2S-doped narrow square QWs, e.g., the mobility dependence on well width and the enhancement factor, which have not been explained so far.

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Section: Mobility Enhancementmentioning

confidence: 97%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

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“…The Si 1−x Ge x layer (well) extends from −L to L, while in the Si layer (barrier) there is a spacer of thickness D s at both sides of the well [5]. To study the intersubband transitions in p-type Si/SiGe quantum wells, knowledge of the hole states and subband structure is essential.…”

Section: The Systemmentioning

confidence: 99%

Intersubband transitions in strained Si/Si1−xGex/Si quantum wells

Hionis

Tsetseri

Zora

et al. 2000

Superlattices and Microstructures

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“…The 2-DHG which is supplied to the inverted interface of Si/SiGe/Si quantum well by a Si boron-doped layer spatially grown beneath the alloy, was controlled in the range of 1.5-7.8ϫ10 11 cm Ϫ2 hole density by biasing the top gate. With increasing 2-DHG sheet density, the hole wave function of these structures expands and moves away from inverted interface, consequently the mobility enhances.…”

Section: A Sadeghzadeh A)mentioning

confidence: 99%

“…The low mobility ͑at 4.2 K͒ of holes confined at the Si/SiGe/Si structures has been a matter of controversy 4,6,10,11 and interface charge, roughness, strain fluctuation, and alloy scattering potentials have been addressed for it. For example, in Ref.…”

Section: ϫ2mentioning

confidence: 99%

Top-gating of p-Si/SiGe/Si inverted modulation-doped structures

Sadeghzadeh

2000

Applied Physics Letters

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Low-temperature electrical properties of two-dimensional hole gases (2-DHGs) in Si/Si0.8Ge0.2/Si inverted modulation-doped structures have been investigated at different hole densities using a metal semiconductor gate sputtered on top of these structures. The 2-DHG which is supplied to the inverted interface of Si/SiGe/Si quantum well by a Si boron-doped layer spatially grown beneath the alloy, was controlled in the range of 1.5–7.8×1011 cm−2 hole density by biasing the top gate. With increasing 2-DHG sheet density, the hole wave function of these structures expands and moves away from inverted interface, consequently the mobility enhances. These results may be understood theoretically by elaborating the role of interface charge, roughness, and alloy scattering mechanisms in limiting the mobility of holes at the inverted interface.

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A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p–Si/Si1−Ge /p–Si selectively doped double heterojunctions structures

Cited by 5 publications

References 13 publications

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

Intersubband transitions in strained Si/Si1−xGex/Si quantum wells

Top-gating of p-Si/SiGe/Si inverted modulation-doped structures

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