A temperature characterization of (Si-FinFET) based on channel oxide thickness

Abstract

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness-based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current-voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET's temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (∆I) within a working voltage range of 0-5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1-5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm.

FinFET Towards Nano-Transistor: A Review

“…The Si channel FinFET has the better electrical characteristics with working temperature as shown in FIGURE 12 [30]. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1-5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness.…”

“…Also it can concluded that the obtained results show that the SiGe FinFET is suitable for the analog application. Effects of working temperature on MOS structure and its electrical parameters has been studied and well expressed in many research papers [27][28][29][30], FinFET temperature characteristics has been investigated by [28,30], based on transfer characteristics of FinFET at drain voltage (Vd=1V) were investigated with different working temperature (-25, 0, 25, 50, 75, 100, and 125 o C) with Si, Ge, GaAs and InAs as a semiconductor channel. The final results indicate that the Ion/Ioff decreased (FIGURE 11) with increasing working temperature for all semiconductors channel types, but with best temperature stability with InAs and best temperature sensitivity with Si.…”

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

“…The transistor based temperature sensors are designed depending on the temperature characteristics of currentvoltage curves of the Nanowire transistor [21,22]. The bipolar transistor can be used as a temperature sensor by connecting the base and collector together.…”

Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

“…However, reducing the size of conventional planar transistors would be exceptionally challenging due to electrostatic leakages and other fabrication issues [4], [5]. The application of nano-science and its inherent technology has been extensively used in interdisciplinary research, particularly in the past two decades [6], [7].…”