A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction

Lee, Jae-Hyun; Kim, Seungchul; Shin, Mincheol

doi:10.1063/1.4985013

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Cited by 3 publications

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“…The electrical characteristics of individual nanoparticles (NPs) and QDs can be measured by placing a metal-coated probe directly on them, using conductive-mode atomic force microscopy (C-AFM), where the current-voltage curves on individual NPs or QDs can be measured. [25][26][27] Upon sweeping the voltage on the sample between negative and positive values, we discovered that some charges, or electrons, get trapped in the QD. This results in a shi in the I-V curves.…”

Section: Introductionmentioning

confidence: 99%

Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Rezeq,

Abbas,

Wen

et al. 2023

Nanoscale Adv.

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Section: Introductionmentioning

confidence: 99%

Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Rezeq,

Abbas,

Wen

et al. 2023

Nanoscale Adv.

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Direct detection of electronic states for individual indium arsenide (InAs) quantum dots grown by molecular beam epitaxy

Rezeq

Abbas

Wen

et al. 2022

Applied Surface Science

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The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

et al. 2018

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We have studied the dependence of Schottky junction (I–V) characteristics on the metal contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I–V) characteristics on the nanoprobe size when it is in contact with a semiconductor substrate. The results show the evolution from sub-10 nm reversed Schottky diode behavior to the normal diode behavior at 100 nm. These results also indicate the direct correlation between the electric field at the M–S interface and the Schottky rectification behavior. The effect of the metal contact size on nano-Schottky diode structure is clearly demonstrated, which would help in designing a new type of nano-devices at sub-10 nm scale.

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A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction

Abstract: A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction.

Cited by 3 publications

References 49 publications

Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Direct detection of electronic states for individual indium arsenide (InAs) quantum dots grown by molecular beam epitaxy

The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

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