A thin chromium film formation monitoring method: Monitoring of the early stages

Jukna, T.; Baltrušaitis, Jonas; Sinkevičius, V.; Viržonis, Darius

doi:10.1016/j.tsf.2007.10.087

Cited by 7 publications

(5 citation statements)

References 15 publications

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“…The 100-Nitrate XPS spectrum has four peaks from deconvolution analysis. The small peaks at approximately binding energy at 576.3 eV and 585.3 eV are due to Cr 3+ species; whereas, the other two peaks are from Cr 6+ close to 579.3 eV and 588.3 eV [34,[53][54][55]. The 100-Nitrate, 50-Nitrate and 25-Nitrate indicate co-existence of Cr 3+ and Cr 6+ together.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 91%

Exploration of the role of anions in the synthesis of Cr containing mesoporous materials at room temperature

Mahony¹,

Wu²,

Kibombo³

et al. 2013

Microporous and Mesoporous Materials

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Section: X-ray Photoelectron Spectroscopymentioning

confidence: 91%

Exploration of the role of anions in the synthesis of Cr containing mesoporous materials at room temperature

Mahony¹,

Wu²,

Kibombo³

et al. 2013

Microporous and Mesoporous Materials

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“…O 2 plasma induced oxidation [8])/Cr/Cr x O y (i.e. Cr x O y formation mechanism as observed in [9]) multilayered composite-substrate system. Specifically, the O 2 plasma process was employed as it is much more effective compared to thermal process and uses a different oxidation mechanism, because of the atomic oxygen present in the plasma.…”

Section: Thin Film Depositionmentioning

confidence: 93%

Tribological properties of the two-step thermally deposited chromium films

Lazauskas

Baltrušaitis

Grigaliūnas

et al. 2013

Applied Surface Science

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“…In conclusion, catalytic activity can be excluded. So far, we can only speculate about the real [28][29][30] HF does not attack Cr 2 O 3 but rather passivates the surface. [31] Thus, a similar interface effect as with the Ti adhesion layer is excluded at the moment.…”

Section: (4 Of 7)mentioning

confidence: 99%

“…Chromium is oxygen active forming about 1 nm oxide under ambient conditions and an initial Cr 2 O 3 layer during initial physical vapor deposition phase. [ 28–30 ] HF does not attack Cr 2 O 3 but rather passivates the surface. [ 31 ] Thus, a similar interface effect as with the Ti adhesion layer is excluded at the moment.…”

Section: Figurementioning

confidence: 99%

Anisotropic Etching of Pyramidal Silica Reliefs with Metal Masks and Hydrofluoric Acid

Kirchner

Neumann

Winkler

et al. 2020

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This work describes the fabrication of anisotropically etched, faceted pyramidal structures in amorphous layers of silicon dioxide or glass. Anisotropic and crystal‐oriented etching of silicon is well known. Anisotropic etching behavior in completely amorphous layers of silicon dioxide in combination with purely isotropic hydrofluoric acid as etchant is an unexpected phenomenon. The work presents practical exploitations of this new process for self‐perfecting pyramidal structures. It can be used for textured silica or glass surfaces. The reason for the observed anisotropy, leading to enhanced lateral etch rates, is the presence of thin metal layers. The lateral etch rate under the metal significantly exceeds the vertical etch rate of the non‐metallized area by a factor of about 6–43 for liquid and 59 for vapor‐based processes. The ratio between lateral and vertical etch rate, thus the sidewall inclination, can be controlled by etchant concentration and selected metal. The described process allows for direct fabrication of shallow angle pyramids, which for example can enhance the coupling efficiency of light emitting diodes or solar cells, can be exploited for producing dedicated silicon dioxide atomic force microscopy tips with a radius in the 50 nm range, or can potentially be used for surface plasmonics.

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A thin chromium film formation monitoring method: Monitoring of the early stages

Cited by 7 publications

References 15 publications

Exploration of the role of anions in the synthesis of Cr containing mesoporous materials at room temperature

Exploration of the role of anions in the synthesis of Cr containing mesoporous materials at room temperature

Tribological properties of the two-step thermally deposited chromium films

Anisotropic Etching of Pyramidal Silica Reliefs with Metal Masks and Hydrofluoric Acid

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