A transformer-based digital isolator with 20kVPK surge capability and &gt; 200kV/µS Common Mode Transient Immunity

Yun, Ruida; Sun, James; Gaalaas, Eric; Chen, Baoxing

doi:10.1109/vlsic.2016.7573497

Cited by 27 publications

(23 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A large dv/dt transient at the floating side can trigger a false turn-on signal for the switch and cause shoot throughs. It is recommended to use the latest gate drives with dedicated optimizations on the common-mode noise rejection rates (CMNR) [64] [65].…”

Section: B Signal Integritymentioning

confidence: 99%

Wireless Power Transfer: A Paradigm Shift for the Next Generation

Hui

Yang

Zhang

2023

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

The first generation of wireless power transfer (WPT) standard Qi, launched in 2010, contains a wide range of transmitter and receiver designs with the aim of maximizing compatibility to attract many manufacturers to share the same standard. Such compatibility feature (i.e., interoperability) has not only attracted over 400 company members in the Wireless Power Consortium (WPC), but also facilitated a fast-growing wireless power market for a decade. The WPC is now expanding the scope of WPT applications to mid-power and high-power applications up to several kilowatts while the Society for Automobile Engineers also set the SAE standard for wireless charging of electric vehicles (EVs) up to tens of kilowatts. Without compromising compatibility, the authors share in this paper their views on the need for a paradigm shift from compatibility to optimal performance in terms of maximum energy efficiency for the entire charging process and minimum charging time. This paradigm change is imminent and important in view of the increasing power of WPT applications. Several enabling technologies essential to the paradigm shift will be addressed.

show abstract

Section: B Signal Integritymentioning

confidence: 99%

Wireless Power Transfer: A Paradigm Shift for the Next Generation

Hui

Yang

Zhang

2023

IEEE J. Emerg. Sel. Topics Power Electron.

View full text Add to dashboard Cite

show abstract

“…This approach guarantees high data rates with a very good isolation rating and CMTI performance [15], while being also suited to a power transfer up to several hundreds of mW [16]. Due to a poorer polyimide BV, typically the isolation layer is about 3x thicker to sustain the same surge voltage of an oxide barrier.…”

Section: Technologies For Chip-scale Galvanic Isolatorsmentioning

confidence: 99%

A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

et al. 2020

View full text Add to dashboard Cite

This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation requirements). Such an approach is based on radio frequency (RF) planar coupling between two side-by-side co-packaged chips. Standard packaging along with proper assembling techniques can be profitably used to go beyond 20-kV surge voltage without using expensive or exotic isolation components. As a proof of concept, a bidirectional data transfer system based on RF planar coupling able to withstand an isolation rating as high as 25 kV has been designed in a low-cost standard 0.35-µm CMOS technology. Experimental measurements demonstrated a maximum data rate of 40 Mbit/s using a carrier frequency of about 1 GHz. The adopted approach also guarantees a common mode transient immunity (CMTI) of 250 kV/µs, which is a first-rate performance in view of next generation galvanic isolators for wide-bandgap power semiconductor devices, such as gallium nitride high-electron mobility transistors (GaN HEMTs) and silicon carbide (SiC) MOSFETs.

show abstract

“…Traditional isolation devices, i.e., optocouplers and discrete transformers, have been widely replaced by highly integrated isolators exploiting electric and magnetic coupling [3], [4], [5], [6], [7]. In the magnetic coupling approach, we can include not only the standard chip-scale isolators (i.e., by means of Fig.…”

Section: Introductionmentioning

confidence: 99%

Capacitive-Coupled Stacked Class-D Oscillators for Galvanic Isolators

Spataro

Ragonese

2023

IEEE Trans. Circuits Syst. II

View full text Add to dashboard Cite

This brief presents a novel class-D oscillator topology conceived for galvanically isolated data transfer based on RF planar coupling. In its general implementation, it consists of n capacitively coupled stacked class-D oscillators, each one loaded by a primary transformer winding. Capacitive coupling between the oscillators guarantees robust frequency/phase synchronization. The oscillation voltages are combined at the secondary transformer winding, thus ideally producing the same oscillation amplitude of a class-D topology with a power consumption reduced by a factor of 1/n thanks to the current-reuse configuration. With respect to traditional topologies, capacitive-coupled stacked class-D oscillators also allow standard MOS transistors (i.e., with a low breakdown voltage) to be reliably operated at higher supply voltages. The oscillator advantages have been highlighted in comparison with the traditionally adopted complementary cross-coupled topology within an isolated data link based on RF planar coupling in a 0.18-µm CMOS technology.

show abstract

A transformer-based digital isolator with 20kVPK surge capability and > 200kV/µS Common Mode Transient Immunity

Cited by 27 publications

References 3 publications

Wireless Power Transfer: A Paradigm Shift for the Next Generation

Wireless Power Transfer: A Paradigm Shift for the Next Generation

A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

Capacitive-Coupled Stacked Class-D Oscillators for Galvanic Isolators

Contact Info

Product

Resources

About