A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

Xiong, Xiong; Huang, Mingqiang; Hu, Ben Yu‐Kuang; Li, Xuefei; Liu, Fei; Li, Sichao; Tian, Mengchuan; Li, Tiaoyang; Song, Jian; Wu, Yanqing

doi:10.1038/s41928-019-0364-5

Cited by 84 publications

(65 citation statements)

References 44 publications

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“…On the one hand, the observed V Peak shows a linearly increasing trend with V G for different temperatures. The high‐efficiency electrostatic control also can be confirmed by their larger‐than‐unity gate‐to‐drain control efficiency, which is defined as η = d V Peak /d V G. [ 24 ] On the other hand, under the same gate condition, V Peak increases with the decreasing temperature due to the reduced phonon scattering effect. Figure 4i gives the plot of PVR (peak‐to‐valley ratio) versus V G at different temperatures.…”

Section: Resultsmentioning

confidence: 99%

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Cheng

Yin

et al. 2021

Advanced Materials

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Negative differential resistance (NDR), which describes the current decrease as the applied bias increases, holds great potential for varieties of electronic applications including radio‐frequency oscillators, multipliers, and multivalue logics. Here, the modulation of a unique NDR effect in ambipolar black phosphorus (BP) transistors is reported, which is activated by specific electrical field dependence of lateral carrier distribution and is distinct from conventional NDR devices that rely on quantum tunneling. The NDR device exhibits a high peak current density (34 µA µm−1) and a high operating temperature. More importantly, due to the strong coupling between the channel and the gate electrode, both the NDR peak current and peak/valley voltages can be effectively modulated by the electrostatic gate. Furthermore, it is demonstrated that light can serve as an additional terminal for NDR modulation. The findings could provide an important insight into the transport behavior of BP transistors and contribute to the design of ambipolar‐semiconductor‐based electrical circuits.

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Section: Resultsmentioning

confidence: 99%

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Cheng

Yin

et al. 2021

Advanced Materials

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“…Owing to their ultimate thin thickness, superior mechanical flexibility and highly tunable electronic performance, two-dimensional materials for flexible applications have attracted tremendous attention [ 1 , 2 , 3 , 4 , 5 ]. Flexible transistors and devices based on 2D materials with high-speed are easy integrated with mature silicon CMOS manufacturing systems and can extend future flexible electronic systems even further with remote wireless capabilities.…”

Section: Introductionmentioning

confidence: 99%

High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

et al. 2021

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Two-dimensional (2D) MoS2 have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS2 exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS2 radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS2 RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency (fT) and maximum oscillation frequency (fmax) increased with reducing gate lengths. From transistors with a gate length of 0.3 μm, we demonstrated an extrinsic fT of 4 GHz and fmax of 10 GHz. Furthermore, statistical analysis of 14 flexible MoS2 RF transistors is presented in this work. The study of a flexible mixer demonstrates the dependence of conversion gain versus gate voltage, LO power and input signal frequency. These results present the potential of CVD bilayer MoS2 for future flexible high-frequency electronics.

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“…[ 101–105 ] Moreover, such band‐to‐band tunneling (BTBT) is based on cold charge injection mechanism, which can be further utilized to construct tunnel field‐effect transistors (TFETs) with smaller subthreshold swing values (<60 mV dec −1 ) and much lower power consumption (Figure 1m). [ 86,106,107 ]…”

Section: Band Alignmentmentioning

confidence: 99%

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

Sun

Zhu

et al. 2021

Adv Elect Materials

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Dynamically engineering the band alignment between materials, especially 2D semiconductors, is critically important for the design of novel devices with superior functions. Here, a review of band alignment engineering in 2D heterostructures and the derived device applications, mainly outlining their potential as photodetectors, photovoltaics, and light‐emitting devices, is provided. Various approaches are summarized, through exploiting the advantages of each component and different device structure, to further improve the performances of the optoelectronic devices. The authors also provide their perspectives on future developments of photoelectric chips based on the newly designed optoelectronic devices.

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A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

Cited by 84 publications

References 44 publications

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

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