A tunable quantum well infrared detector based on photon-assisted resonant tunnelling

Abstract

MBE grown quantum devices for the detection of infrared light are introduced. These structures are based on photon-assisted resonant tunnelling and will have a projected tuning range of 5 to 30 pm, Two structures are discussed: a single quantum well device with large initial population for high absorption, and a double quantum well structure with promise of sharper detection linewidth and wider tuning range. Optical and electrical measurements of material properties are presented, and their implications on the devices discussed.

AlGaN based III-nitride tunnel barrier hyperspectral detector: Effect of internal polarization

“…21 Resonant tunneling through a QW can also be used for tunable MIR-FIR detection, where the resonant tunneling energy can be tuned by varying the potential drop across the QWs. 22,23 In contrast to THz, FIR, and MIR radiation, only few studies address the detection tunability in the UV-visible region. [24][25][26] This could be due to the late emergence of wide bandgap semiconductors, like III-nitrides and ZnO.…”

Electric-Field-Dependent Tilt (Cone) Angle in a Chiral Smectic C Liquid Crystal Showing Electroclinic Effect in the Smectic A Phase

“…A double quantum well system (DQW) comprising two dimensional electron gases (2DEG) in parallel is a versatile structure for the fabrication of quantum electric and optical devices such as a double layer electron transistor [1], magnetic resonant tunneling diodes [2], a quantum well infrared detector [3], and a double barrier terahertz source [4]. During the growth process of all these devices, defect centers are induced between the conduction and valence band due to the lattice relaxation process which act as electron traps [5,6].…”