2017 IEEE Optical Interconnects Conference (OI) 2017
DOI: 10.1109/oic.2017.7965503
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A two-segment optical DAC 40 Gb/s PAM4 silicon microring resonator modulator transmitter in 65nm CMOS

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Cited by 17 publications
(10 citation statements)
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“…A hybrid-integrated PAM4 transmitter prototype with a 10 µm radius two-segment carrier-depletion microring modulator and a 65 nm CMOS IC driver using an optical DAC is shown in Fig. 11(a) [75]. The 40 Gb/s PAM4 optical measurement results are depicted in the eye-diagrams of Fig.…”
Section: Carrier-depletion Microring Modulatorsmentioning
confidence: 99%
See 1 more Smart Citation
“…A hybrid-integrated PAM4 transmitter prototype with a 10 µm radius two-segment carrier-depletion microring modulator and a 65 nm CMOS IC driver using an optical DAC is shown in Fig. 11(a) [75]. The 40 Gb/s PAM4 optical measurement results are depicted in the eye-diagrams of Fig.…”
Section: Carrier-depletion Microring Modulatorsmentioning
confidence: 99%
“…(a) Hybrid-integrated PAM4 transmitter prototype with a 10 µm radius two-segment carrier-depletion microring modulator and a 65 nm CMOS IC driver; (b) Measured optical eye diagrams at 40 Gb/s[75].…”
mentioning
confidence: 99%
“…Wavelength tuning with an efficiency of < 20 mW/π over a full free-spectral range was also demonstrated. Similar to the segmentation of the electrodes in an MZM to realize an optical DAC, several groups [81][82][83] have investigated segmentation of phase shifters in a MRM. To implement PAM-4 modulation with a single MRM driven by two simple NRZ drivers, the MRM is modified by utilizing two phase shifters with a longer MSB segment and a shorter LSB segment as shown in figure 12(a).…”
Section: Mzms For Pammentioning
confidence: 99%
“…Higher voltage-swing and faster transistors available in BiCMOS pave the way for demonstration of BiCMOS driver and SiP modulator co-design for PAM-M modulation format [97,98]. In [98], a monolithic integration of the driver and optical PAM-4 modulator in BiCMOS process Figure 17: Demonstrations of electronic-photonic integrated PAM-4 transmitters: a) hybrid integration of a 3-segment MZM employing SISCAP phase shifter and a 40-nm-CMOS driver [100]; b) monolithic integration of a 2-segment MZM and a CMOS driver using a 90-nm CMOS process [96]; c) a segmented MRM and a hybrid integrated driver in 65-nm CMOS [82].…”
Section: Electronic-photonic Integrated Transmittersmentioning
confidence: 99%
“…In this manuscript we focus on different silicon photonic (SiP) travelling wave Mach Zehnder modulator (TWMZM) architectures which enable PAM-4 signal generation in the optical domain versus generating the PAM-4 signal in electrical domain. Over the past few years, there has been significant work on PAM-4 generation using vertical-cavity surface-emitting lasers (VCSEL)s [7][8], silicon photonic ring modulators [9][10][11][12][13], silicon-germanium electrooptic modulators [14][15], III-V-onsilicon modulators [16] silicon hybrid modulators [17], TWMZMs [18][19][20][21][22][23][24], electro-optic polymer modulators [25] and LiNbO3 modulators [26]. In the majority of the presented works, PAM-4 is generated in the electrical domain either by passive power combination of two OOK signals or using digital to analog convertors (DACs) and digital signal processing (DSP).…”
Section: Introductionmentioning
confidence: 99%