A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents

Rao, Sandro; Pangallo, Giovanni; Benedetto, Luigi Di; Rubino, Alfredo; Licciardo, Gian Domenico; Corte, Francesco G. Della

doi:10.1016/j.sna.2017.11.026

Cited by 12 publications

(10 citation statements)

References 18 publications

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“…These sources of performance degradation can be mitigated using sensing methods based on differential forward voltage (∆V F ) [ 39 , 46 ]. In contrast to the standard technique, ∆V F can either increase (PTAT) or decrease (CTAT) with absolute temperature.…”

Section: Methodsmentioning

confidence: 99%

“…As such, there are no reports of SiC-Schottky diodes working predictably over vast temperature ranges, much less so sensors. However, with the proposal of differential measurement techniques for SiC-Schottky diode temperature sensors [ 28 , 39 ], which considerably increase sensing linearity, as well as the recent introduction of a practical inhomogeneity modeling technique [ 40 ], the premises are set for investigating the potential performances of these devices over ranges spanning from cryogenic levels to high-temperature domains.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Pascu

Pristavu

Brezeanu

et al. 2021

Sensors

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A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Pascu

Pristavu

Brezeanu

et al. 2021

Sensors

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“…The first functional block is the AC/DC converter consisting of a Graetz bridge with Schottky diodes. 32,33 These diodes have the particularity to be fast with a low threshold voltage: 0.3-0.4 V. The circuit is also equipped with a filter capacitor and a Zener protection diode, limiting voltage spikes to 5 V. 2. The second stage constitutes the energy treatment system (Texas Instruments BQ25504) whose operation has been described above.…”

Section: A Modeling Of the Energy Extraction Circuit (Bq25504)mentioning

confidence: 99%

An autonomous low-power management system for energy harvesting from a miniaturized spherical piezoelectric transducer

Diab

Lefebvre²,

Nassar³

et al. 2019

Review of Scientific Instruments

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A new spherical vibrational energy harvesting device with an additional low power management circuit for optimizing the power transfer from the mechanical vibrations to a storage capacitor is presented. The device is devoted to underwater wireless sensor network applications due to its broadband vibrational energy harvesting, sensing, and communicating facilities. The sensing node container consists of two acrylic glass (PMMA) half-spherical shells and a Pz26 piezoelectric ring clamped between the shells. The energy harvesting, the management circuit, and communication electronics were fitted within the hollow portion of the sphere. A simulation model of the energy extraction and management system using SPICE has been developed. This simulation shows the feasibility and efficiency of the low power extraction circuit; a level of the necessary stored voltage was set at 3 V. The numerical model was validated by underwater experimental measurements; a voltage of 3 V was obtained at the terminals of a storage capacitor (47 µF) which was sufficient to supply the communication electronics. Power harvesting performances were measured relative to the transmitter/sensor distance and the incident acoustical field excitation voltage. Finally, 175 µW of harvested power has been measured with an excitation voltage of 8 Vpp at 5 cm distance from the emitter.

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“…Schottky barrier diodes (SBDs) are generally used for designing sensors for temperature, pressure and atmospheric gas composition [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. A SBD is also called a * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

Efeoǧlu¹,

Türüt²

2022

J. Phys. D: Appl. Phys.

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We have fabricated the Au/n-Si (D1), Au/Cu/n-Si (D2), Au/Cu(4nm)/n-Si (D3) and Au/Cu(2nm)/n-Si (D4) Schottky-barrier diodes (SBDs). The thickness of the Cu Schottky contact (SC) films for the D2, D3, and D4 diodes has been chosen as 100, 4 and 2 nm, respectively. We have investigated the thermal sensitivity from the voltage-temperature (V-T) characteristics of the SBDs at different current levels. The V-T measurements have been made in the temperature range from 10 K to 320 K with steps of 2 K, at the different current levels from 50 nA to 141.70 µA. The V-T curves have shown a good linearity degree for all SBDs. The slope dV/dT = α or thermal sensitivity coefficient α for each diode has decreased with increasing current level from 50 nA to 141.70 µA. But, it has been seen that the SBDs with the Cu SC have approximately the same α value as independent of metal thickness at the same current level. That is, the thermal sensitivity coefficient value has changed approximately from 2.48 mV/K at 50 nA to 1.82 at 141.70 µA for the SBDs with Cu Schottky contact as independent metal thickness. Furthermore, the α versus current level plots of the diodes have exhibited a linear behavior. The intercept α0 and slope dα/dI values of the α versus current level plots have been obtained as 2.80 mV/K and -0.0843 mV/(AK) for D2, and 2.85 mV/K and -0.092 mV/(AK) for D3 and 2.83 mV/K and -0.0876 mV/(AK) for D4. These values are very close to each other and the difference between the slope (dα/dI) values is small enough to be neglected.

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A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents

Cited by 12 publications

References 18 publications

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

An autonomous low-power management system for energy harvesting from a miniaturized spherical piezoelectric transducer

A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness

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