A Verilog-A model of an undoped symmetric dual-gate MOSFET

Cobianu, O.M.; Soffke, Oliver; Glesner, Manfred

doi:10.5194/ars-4-303-2006

Cited by 12 publications

(4 citation statements)

References 5 publications

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“…This allows a direct comparison to the resistive-loaded differential amplifier using the DG MOSFET, designed by Pakaree and Srivastava [14]. Comparative advantages and disadvantages of resistive-loaded and active-loaded differential amplifier topologies have been given in Table 1 [6,8,19,[26][27][28]]. An active-loaded topology enables the resistors to be replaced by current sources for each differential pair transistor.…”

Section: Differential Amplifiers and Their Operationmentioning

confidence: 99%

“…The challenge of this design was attempting to use the DG MOSFET as a prominent component in the differential amplifier to demonstrate it as a usable component in typical electronic applications. To apply the DG MOSFET, various mathematical and circuital models have been presented for the drain current [6][7][8], transconductance [6] (for symmetrical and asymmetrically-driven DG MOSFETs), and logic gate-modeling [9,10]. However, these models still require biasing information to achieve voltages and currents to meet design specifications, allowing one to use the component.…”

Section: Introductionmentioning

confidence: 99%

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Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

Pillay

Srivastava

2022

SN Appl. Sci.

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This research paper proposes the design of an active-loaded differential amplifier using the Double-Gate (DG) MOSFET. This differential amplifier employs feedback and simplifies a previously designed topology by reducing it to a single-ended output instead of a differential one. Other topologies have been referred to determine the benchmark of this design work. The DG MOSFET has been utilized for its high-frequency characteristics, Radio Frequency (RF) applications, and possible advantages in scalability. Electronic device simulation determines the technical feasibility of this differential amplifier using DG MOSFET. The designed differential amplifier exhibits a differential gain of 1.7–1.8 V/V and −3 dB cut-off frequency of 42 MHz. The amplifier can be used in various applications using this methodical design process and the circuital information.

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Section: Differential Amplifiers and Their Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

Pillay

Srivastava

2022

SN Appl. Sci.

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“…In recent years, different compact models have been developed for MGs FET [9][10][11]. Just a few works have been carried out for the implementation of DG MOSFET compact models in the Verilog-A language [12][13][14], and most of the proposed works are dedicated to DC or AC models.…”

Section: Introductionmentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Smaani¹,

Yacin

Nafa

et al. 2021

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This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software.

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“…Several analytical drain current models have been presented in the literature for long-channel undoped DG MOSFETs [18,[70][71][72][73][74][75][76][77]. In most of these models, numerical iterations are required to calculate the drain current.…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of nanoscale multi-gate MOSFETs

Tsormpatzoglou¹

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The subject of the PhD is focused on theoretical and experimental studies of nanoscale multi-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The theoretical part is orientated towards the derivation of analytical expressions for the potential distribution within the channel of the transistors, from which characteristic parameters of the transistors like threshold voltage, subthreshold slope (SS) and Drain Induced Barrier Lowering (DIBL) are derived. The final aim of the work is to obtain analytical compact expressions for the drain current, valid in all regions of operation, i.e. from weak inversion to strong inversion in the below and above threshold voltage regions. First, symmetrical Double-Gate MOSFETs (DG MOSFETs) are studied, whereas the study of all other types of multi-gate MOSFETs (triple-gate and gate-all-around) is based on the derived model of DG MOSFETs.Different approaches produced various and interesting solutions for the different devices. For the experimental part, the transfer characteristics of single-FinFETs and 5-FinFETs were measured at room temperature. For analysis of the experimental data, numerical simulations were performed using the three-dimensional (3-D) SILVACO-ATLAS tools to verify the theoretical speculations and optimize the device performance.A simple analytical expression is derived for the potential distribution along the silicon channel of DG MOSFET in the weak inversion region. The model is compared and verified with the numerical solution of the two-dimensional Poisson's equation in terms of the geometrical characteristics of the transistor: the channel length (L), the silicon thickness (t Si ) and the gate oxide thickness (t ox ). It is found that the analytical expressions are effective even for channel lengths less than 30 nm, when the ratio of L/t Si is ≥ 2-3. Using the extra potential induced in the channel due to the Short-Channel Effects (SCE), a semi-analytical expression for the subthreshold drain current is derived, through which analytical expressions for the subthreshold slope, the drain-induced barrier lowering and the threshold voltage are obtained and discussed. Comparison of DG MOSFETs with silicon and germanium as channel materials, show that the use of germanium suppresses the SCEs.Using the simple analytical expression for the potential distribution, the transconductance to drain current ratio (g m /I d ) and the body factor (n) are derived for

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A Verilog-A model of an undoped symmetric dual-gate MOSFET

Cited by 12 publications

References 5 publications

Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

International Journal of Electronics and Telecommunications

Characterization and modeling of nanoscale multi-gate MOSFETs

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