A vertical Hall device in CMOS high-voltage technology

Schurig, E.; Demierre, Michel; Schott, Christian; Popović, R.S.

doi:10.1016/s0924-4247(01)00859-7

Cited by 36 publications

(12 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…D I is the width of partial implantation strips and D P is the spacing between partial implantation strips. The implantation layout of N-well is divided into multiple implantation strips instead of making an opening over the entire N-well active area [7][8].…”

Section: Partial N-well Implantationmentioning

confidence: 99%

“…TCAD process and device simulations have been performed to validate the feasibility of the proposals. Fig.1 shows the typical structure of CMOS VHDs with five contacts [8]. The device active area is usually formed by a deep N-well on a p-type substrate with low-doped concentration.…”

Section: Introductionmentioning

confidence: 99%

“…The N-well active region is usually surrounded by P-type diffusion layer (PTUB) which decides the device lateral dimension. In order to reduce the 1/f noise and the surface recombination of the Hall device, a top p+ layer is usually implanted between five contacts to push the current away from the N-well surface [8]. The top P+ layer and PTUB layer are connected, which are always grounded.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Improved Magnetic Sensitivity of CMOS Vertical Hall Device by Using Partial Implantation Technique

Huang

Wang

et al. 2014

ECS Trans.

View full text Add to dashboard Cite

With the continuous scaling of CMOS technology, the doping level of N-well is constantly increasing, which leads to a big decrease in magnetic sensitivity for vertical Hall devices (VHDs). Moreover, the Gaussian profile of doping concentration gives an additional decrease in N-well effective depth, which further reduces the magnetic sensitivity. In this paper, we apply partial N-well and top p+ layer implantation techniques to lower the doping level of Nwell and improve the doping profile by means of impurity lateral diffusion and compensation effects. TCAD process and device simulations have been carried out for a typical five-contact VHD in 0.13 μm CMOS technology. Simulation results show that the current-related magnetic sensitivity is greatly improved from 40 V/AT to 110 V/AT by using the partial implantation techniques. Meanwhile, the voltage-related magnetic sensitivity is also increased and not significantly decreased.

show abstract

Section: Partial N-well Implantationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improved Magnetic Sensitivity of CMOS Vertical Hall Device by Using Partial Implantation Technique

Huang

Wang

et al. 2014

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…(a) pure CMOS technology (Hall sensor, reprinted from[85], with permission from Elsevier. ); (b) post-CMOS S&A process (thermal RMS converter[86]); (c) wafer-level stacking (cantilever array[87]); (d) flip-chip stacking (LETI's accelerometer[88]), and (e) SOP (Bosch's accelerometer[89])Table 5.2 Characteristics of different S&As with respect to their CMOS integration of literature describing CMOS fabrication and material sets…”

mentioning

confidence: 99%

More than Moore

Zhang¹,

Roosmalen²

2009

View full text Add to dashboard Cite

“…2,3 However, semiconductor-based magnetometers exhibit limited sensitivity for small magnetic fields in the range of Earth's magnetic field, exhibit large temperature dependency and offsets, and require complicated fabrication processes. [3][4][5] Despite high resolution ͑nT Ͻ 1͒, the flux-gate consumes significant power ͑hundreds of mW͒ during operation. In addition, the realization of very small search coil and micromachined flux-gate magnetometers is usually a challenge because of the difficulty in fabrication of miniaturized coils.…”

mentioning

confidence: 99%

Fabrication and Characterization of a Microsensor for Detecting Simultaneously Both Earth’s Magnetic Field and Acceleration

Cho

Kim

et al. 2007

Electrochem. Solid-State Lett.

View full text Add to dashboard Cite

This paper presents a resonant microsensor for detecting simultaneously both the Earth's magnetic field and its acceleration. The structure design is based on the Lorentz force and lateral driving. The process uses a silicon-on-glass wafer and gold-silicon eutectic bonding for the wafer-level hermetic packaging. A prototype sensor with resonant frequencies in a range of around 2 kHz shows Q factors of about 7. In total, 2 mW is consumed in the current driving element. When 1 g and 0.35 G were applied to the sensor, a sensitivity of 104 mV/g and 5 mV/G was measured.Recently there has been increasing demand for an electronic compass in a variety of mobile electronic systems. 1 Until now, a variety of magnetometers for portable applications have been developed, including Hall-effect devices, anisotropic magnetoresistance devices, giant magnetoresistance devices, magneto-diodes, magnetotransistors, flux-gates, and so on. 2,3 However, semiconductor-based magnetometers exhibit limited sensitivity for small magnetic fields in the range of Earth's magnetic field, exhibit large temperature dependency and offsets, and require complicated fabrication processes. 3-5 Despite high resolution ͑nT Ͻ 1͒, the flux-gate consumes significant power ͑hundreds of mW͒ during operation. In addition, the realization of very small search coil and micromachined flux-gate magnetometers is usually a challenge because of the difficulty in fabrication of miniaturized coils. 6-8 Only a few Lorentzforce-based resonant magnetometers have been reported, 9-13 but because the resonant structure is easily affected by external acceleration, they have difficulty excluding the interference of unintended acceleration signal in the magnetic signal channel when acceleration due to the external shock or tilting is applied to the sensor. 10 In this work, we have conceived a microsensor for detecting the magnetic field using the Lorentz force and differentiating the magnetic field and the acceleration using the modulated frequency difference. This method can integrate a z-axis magnetometer and an x-axis ͑or y-͒ accelerometer in one microstructure and provide advantages in the assembly process and size minimization. Device Design and FabricationA conceptual schematic of the proposed microsensor is shown in Fig. 1. The operational principle is based on the Lorentz force arising from a current-carrying conductor in the magnetic field. 13 To realize this concept, a conducting line is formed on one side of the spring of a silicon microelectromechanical system ͑MEMS͒ structure and stationary sensing electrodes are formed on the upper cap wafer as shown in Fig. 1a. A movable silicon mass is suspended over a glass substrate by means of L-shaped springs, which are designed to be more easily movable in the x direction, whereas the suspensions in the y-and z direction are significantly stiffer and hence suppress corresponding motions. Consequently, the Lorentz force and applied acceleration laterally displaces the suspended structure.If an ac current flows through the co...

show abstract

A vertical Hall device in CMOS high-voltage technology

Cited by 36 publications

References 6 publications

Improved Magnetic Sensitivity of CMOS Vertical Hall Device by Using Partial Implantation Technique

Improved Magnetic Sensitivity of CMOS Vertical Hall Device by Using Partial Implantation Technique

More than Moore

Fabrication and Characterization of a Microsensor for Detecting Simultaneously Both Earth’s Magnetic Field and Acceleration

Contact Info

Product

Resources

About