A wafer-level heterogeneous technology integration for flexible pseudo-SoC

Yamada, Hiroshi; Onozuka, Yutaka; Iida, Atsuko; Itaya, Kazuhiko; Funaki, Hideyuki

doi:10.1109/isscc.2010.5434011

Cited by 7 publications

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

Ren¹,

Zheng²,

Lu³

et al. 2018

J. Semicond.

View full text Add to dashboard Cite

This paper investigated the DC and RF performance of the InP double heterojunction bipolar transistors (DHBTs) transferred to RF CMOS wafer substrate. The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger, of 0.8 μm in width and 5 μm in length, are changed unobviously, while the cut-off frequency and the maximum oscillation frequency are decreased from 220 to 171 GHz and from 204 to 154 GHz, respectively. In order to have a detailed insight on the degradation of the RF performance, small-signal models for the InP DHBT before and after substrate transferred are presented and comparably extracted. The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

show abstract

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

Ren¹,

Zheng²,

Lu³

et al. 2018

J. Semicond.

View full text Add to dashboard Cite

show abstract

7.5Vmax arbitrary waveform generator with 65nm standard CMOS under 1.2V supply voltage

Nakura

Mita

Iizuka

et al. 2012

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

View full text Add to dashboard Cite

This paper presents a digitally controlled arbitrary waveform generator whose output voltage range is 0 to 7.5V under a 1.2V supply voltage. The high output voltage generation is realized using only 65nm standard MOS transistors. It consists of a voltage increasing block and a voltage decreasing block to realize stable high voltage output. Experimental results show that our waveform generator can generate arbitrary waveform, and it directly drives a MEMS structure.

show abstract

A wafer-level system integration technology for flexible pseudo-SOC incorporates MEMS-CMOS heterogeneous devices

Yamada

Onozuka

Iida

et al. 2010

2010 IEEE CPMT Symposium Japan

View full text Add to dashboard Cite

A wafer-level heterogeneous technology integration for flexible pseudo-SoC

Cited by 7 publications

References 3 publications

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

7.5Vmax arbitrary waveform generator with 65nm standard CMOS under 1.2V supply voltage

A wafer-level system integration technology for flexible pseudo-SOC incorporates MEMS-CMOS heterogeneous devices

Contact Info

Product

Resources

About