A Wave Approach to Signal and Noise Modeling of Dual-Gate MESFET

Wave approach for noise modeling of gallium nitride high electron‐mobility transistors

“…The scattering matrices and the wave approach have appeared as an efficient tool for computer‐aided design of networks working at microwave frequencies . The wave approach gives the possibility to treat the network noise in terms of incident and reflected waves, thus being compatible with the scattering matrix description of microwave networks.…”

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

“…Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6]. However, at microwave frequencies, a wave representation of noise looks attractive since it allows the use of scattering matrices for the noise computations, leading to advantages in Computer-Aided Design (CAD) of microwave networks [2,[7][8][9][10][11][12][13][14][15][16][17][18]. The power of the wave representation of noise lies in its ability to treat the network noise in terms of incident and reflected waves, which is compatible with the scattering matrix description of microwave networks.…”

“…For this reason, a large number of circuit designers still uses the older and cheaper measurement setups, resulting in time-consuming noise measurements. Consequently, different transistor noise models were developed [1][2][3][4][5][6][7][8][9] in order to provide more efficient transistor noise analysis within circuit simulators. Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6].…”

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

“…The wave approach is useful not only for noise modelling, but also for measurement of microwave FETs [10]. The noise wave modelling procedures of MESFETs/HEMTs and dual-gate MESFETs based on T representation of transistor intrinsic circuit are proposed in [12] and [13].…”

“…Therefore, during the last few decades an extensive work has been carried out in the field of signal / noise modelling of microwave transistors. There is a number of different models, starting from accurate physical models which require knowledge about the numerous technological parameters [1,2], through the widely used empirical models, mostly based on equivalent circuit representation of a transistor [3][4][5][6][7][8][9][10][11][12][13][14][15], to the models based on the application of the artificial neural networks, based either on the black box modelling approach [16,17] or on a combination with the empirical models [18].…”