A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Lamichhane, Ranjan; Ericsson, Nance; Frank, S.S.; Britton, C.L.; Marlino, Laura D.; Mantooth, Alan; Francis, Matt; Shepherd, Paul; Glover, Michael D.; Perez, S.; McNutt, Ty; Whitaker, Bret; Cole, Zach

doi:10.1109/ispsd.2014.6856064

Cited by 40 publications

(12 citation statements)

References 9 publications

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“…The SiC technology is surely becoming a reliable and relevant alternative to silicon and it is in power electronics that this can be seen most clearly [22]. Leading companies around the world have created specialized manufacturing facilities for SiC power semiconductor devices.…”

Section: Recent Advances In Silicon Carbide Technologymentioning

confidence: 99%

Silicon carbide power electronics for electric vehicles

Stefanskyi

Starzak

Napieralski

2015

2015 Tenth International Conference on Ecological Vehicles and Renewable Energies (EVER)

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The success of electric vehicle drives heavily depends on the maximization of energy conversion efficiency. Losses in power electronic converters increase system size, weight and cost, raise energy demand and limit the operating distance range. Advances in semiconductor technology can remedy these problems and silicon carbide devices are of special interest in this context. This material enables manufacturing high-voltage devices with lower on-state voltage drop and shorter switching times, thus reducing both static and dynamic power loss. In this paper, recent achievements in silicon carbide technology as well as their applications in electrical vehicles have been reviewed.

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Section: Recent Advances In Silicon Carbide Technologymentioning

confidence: 99%

Silicon carbide power electronics for electric vehicles

Stefanskyi

Starzak

Napieralski

2015

2015 Tenth International Conference on Ecological Vehicles and Renewable Energies (EVER)

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“…Although SOI technology can be used to develop applications of high‐temperature gate driver integrated circuit, its complex fabrication processes increase fabrication costs, which makes the high price of driven chips based on SOI technology. The gate driver integrated circuits' temperature can reach 400

°

C–500

°

C by using the SiC IC fabrication process [17–21]. The maximum temperature of the undervoltage protection circuit that is proposed by the 4H SiC IC fabrication process is 300

°

C [22].…”

Section: Introductionmentioning

confidence: 99%

High‐speed gate driver circuit of SiC‐MOSFET for high temperature application

Zhou

Zhang

et al. 2020

IET power electron.

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In this study, a silicon carbide (SiC) MOSFET driving circuit and its protection circuit applied to high temperature (HT) environment are designed by using commercial off‐the‐shelf discrete components. The proposed driving circuit can work at 200°C with a low driving dissipation. An isolation structure with a transformer is utilised to prevent the control circuits from being disturbed by the power circuit. The high value of output driving voltage VGS is 19 V to ensure the low on‐resistance of SiC MOSFET, while the low value of VGS is −5 V to ensure the SiC MOSFET not be turned on mistakenly. The driving circuit also solves the the contradiction between the BJT switch speed and power dissipation of conventional HT SiC MOSFET driving circuit. The rising time and falling time of the output VGS are reduced greatly, which can increase the performance of SiC MOSFET in high frequency application at a HT.

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“…This eliminates the necessity for extra cooling, protection and passive devices. This, in turn, will maximize power density by lowering the board area, wire routing lengths, parasitics, power loss and cost in high voltage and high power systems [6].…”

Section: Introductionmentioning

confidence: 99%

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

Rahman

Roy

Murphree

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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1 1 Abstract-This paper describes a high temperature voltage comparator and an operational amplifier in a 1.2 µm silicon carbide CMOS process. These circuits are used as building blocks for designing a high temperature SiC low-side over current protection circuit. The over current protection circuit is used in the protection circuitry of a SiC FET gate driver in power converter applications. The op amp and the comparator have been tested at 400 °C and 550 °C temperature respectively. The op amp has an input common-mode range of 0-11.2 V, DC gain of 60 dB, unity gain bandwidth of 2.3 MHz and a phase margin of 48° at 400 °C. The comparator has a rise time and a fall time of 38 ns and 24 ns, respectively, at 550 °C. The over current protection circuit, implemented with these analog building blocks, is designed to sense a voltage across a sense resistor up to 0.5 V. Keywords-comparator, op amp, current sensor, silicon carbide, high temperature electronics, wide bandgap ICs. I.K. Addington is with the

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A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Cited by 40 publications

References 9 publications

Silicon carbide power electronics for electric vehicles

Silicon carbide power electronics for electric vehicles

High‐speed gate driver circuit of SiC‐MOSFET for high temperature application

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

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