A wide-locking range V-Band injection-locked frequency divider

Zhou, Chunyuan; Zhang, Lei; Qian, He

doi:10.1109/icsict.2012.6467789

Cited by 3 publications

(4 citation statements)

References 14 publications

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“…This problem can be solved by increasing the division ratio of the ILFD. However, to operate at high division ratio, a harmonic signal with a small magnitude should be used, which results in a narrow locking range of the ILFD [ 19 , 20 ]. Additionally, the injection mixer for the high division ratio creates larger parasitic capacitance than the injection switch of the divide-by-two ILFD.…”

Section: Locking Range Analysis Of Ilfdmentioning

confidence: 99%

An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

Kim

et al. 2021

Sensors

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An 18.8–33.9 GHz, 2.26 mW current-reuse (CR) injection-locked frequency divider (ILFD) for radar sensor applications is presented in this paper. A fourth-order resonator is designed using a transformer with a distributed inductor for wideband operating of the ILFD. The CR core is employed to reduce the power consumption compared to conventional cross-coupled pair ILFDs. The targeted input center frequency is 24 GHz for radar application. The self-oscillated frequency of the proposed CR-ILFD is 14.08 GHz. The input frequency locking range is from 18.8 to 33.8 GHz (57%) at an injection power of 0 dBm without a capacitor bank or varactors. The proposed CR-ILFD consumes 2.26 mW of power from a 1 V supply voltage. The entire die size is 0.75 mm × 0.45 mm. This CR-ILFD is implemented in a 65 nm complementary metal-oxide semiconductor (CMOS) technology.

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Section: Locking Range Analysis Of Ilfdmentioning

confidence: 99%

An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

Kim

et al. 2021

Sensors

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“…A conventional cross-coupled ILFD is depicted in Figure 1a [9,10] which has an injection device M inj . C db , C gb , C gd , and C gs are parasitic capacitances from cross-coupled pair and C ind is the parasitic capacitance of the inductor.…”

Section: Comparison Of Cross-coupled Ilfds and Colpitts Ilfdsmentioning

confidence: 99%

“…In order to meet multiband applications and enhance the robustness, a sufficiently large LR is required. Boosting the injection efficiency [9] and using high-order resonators [10] are common methods to extend the LR. In addition, other oscillator topologies can be employed to find out a wide LR ILFD [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A 0.6 V 2.7 mW 94.3% locking range injection‐locked frequency divider using modified varactor‐less Colpitts oscillator topology

Qian

Wang

et al. 2021

IET Circuits, Devices & Systems

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This study presents a 4.6–12.8 GHz injection‐locked frequency divider (ILFD) based on modified varactor‐less Colpitts oscillator topology. A modified Colpitts ILFD is proposed to improve the LR and reduces power consumption, simultaneously. Meanwhile, the forward body bias technique is utilized to further decrease power consumption. Based on the 55 nm CMOS technology, a modified varactor‐less Colpitts ILFD with a free‐running frequency of 4.05 GHz is implemented. The proposed modified varactor‐less Colpitts ILFD exhibits 94.3% LR from 4.6 to 12.8 GHz with an injection power of 0 dBm. It consumes 2.7 mW power from 0.6 V supply voltage and the core area is 0.38 mm2.

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“…For recent wireless transceivers in V-band applications, a frequency synthesizer is to generate local oscillator signals to run modulation and demodulation. A phase-locked loop (PLL) in the frequency synthesizer is a key technique to keep stable signals in communication systems [1,2]. The voltage-controlled oscillator (VCO) and the first-stage frequency divider of the PLL usually are power-hungry circuits in V-band applications.…”

Section: Introductionmentioning

confidence: 99%

V-band CMOS injection-locked frequency tripler using differential harmonic current injection technique

Chang

2021

Analog Integr Circ Sig Process

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This letter presents a V-band CMOS injection-locked frequency tripler (ILFT) fabricated in a standard 90-nm CMOS process. By employing a differential harmonic current injection technique, a frequency doubler (2f 0 ) realized in the connected source terminal of injection transistors is to mix with injection signals (f 0 ) through injection transistors, and output signals (3f 0 = 2f 0 ? f 0 ) are obtained from output buffers. The proposed ILFT improves the locking range and power dissipation by adopting two cross-coupled transistor pairs, and strengthens the rejection ability of second-order harmonic by using a resonator network. The proposed ILFT has the free-running frequency of 62.49 GHz and locking ranges of 61.2 to 64.2 GHz as input injection signals from 20.4 to 21.4 GHz at an input power level of 0 dBm. The proposed ILFT core consumes 7.48 mW from a supply voltage of 1.1 V.

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A wide-locking range V-Band injection-locked frequency divider

Cited by 3 publications

References 14 publications

An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

A 0.6 V 2.7 mW 94.3% locking range injection‐locked frequency divider using modified varactor‐less Colpitts oscillator topology

V-band CMOS injection-locked frequency tripler using differential harmonic current injection technique

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