A Wideband High-Efficiency GaN MMIC Power Amplifier for Sub-6-GHz Applications

Hu, Lei; Liao, Xuejie; Zhang, Fan; Wu, Haifeng; Ma, Shenglin; Lin, Qian; Tang, Xiao

doi:10.3390/mi13050793

Cited by 10 publications

(2 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, a broadband GaN HEMT power amplifier based on the feeding capacitance compensation method is described in Reference [12] with a bandwidth of 2.2-5.1 GHz and an output power of 38.5-41.5 dBm. A gain equalization technique was employed in the inter-stage matching circuit and a low-loss output matching network was utilized to ensure high efficiency [13]; however, the size of the chip reached 14.35 mm 2 . A novel topology of coupled resonators was exploited for the broadband inter-stage matching to cover the 802.11ax bands from 2.4 to 6 GHz [14], with amplifiers featuring a gain flatness of about 10 dB over the entire operating frequency band.…”

Section: Introductionmentioning

confidence: 99%

Design of a Compact 2–6 GHz High-Efficiency and High-Gain GaN Power Amplifier

Zhou,

Wang,

Dai

et al. 2024

Micromachines

View full text Add to dashboard Cite

In this paper, a novel wideband power amplifier (PA) operating in the 2–6 GHz frequency range is presented. The proposed PA design utilizes a combination technique consisting of a distributed equalization technique, multiplexing the power supply network and matching network technique, an LR dissipative structure, and an RC stability network technique to achieve significant bandwidth while maintaining superior gain flatness, high efficiency, high gain, and compact size. For verification, a three-stage PA using the combination technique is designed and implemented in a 0.25 μm GaN high-electron-mobility transistor (HEMT) process. The fabricated prototype demonstrates a saturated output power of 4 W, a power gain of 21 dB, a gain flatness of ±0.6 dB, a power-added efficiency of 39–46%, and a fractional bandwidth of 100% under the operating conditions of drain voltage 28 V (continuous wave) and gate voltage −2.6 V. Moreover, the chip occupies a compact size of only 2.51 mm × 1.97 mm.

show abstract

Section: Introductionmentioning

confidence: 99%

Design of a Compact 2–6 GHz High-Efficiency and High-Gain GaN Power Amplifier

Zhou,

Wang,

Dai

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

“…This is primarily attributed to the wide energy bandgap (3.4 eV), high saturation velocity (>2.5 × 10 5 m/s), and high breakdown voltage (>100 V) of GaN HEMT devices [5][6][7]. For this reason, GaN HEMT devices have been widely used in various PA implementations to endure modulated high-power RF signals [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique

Ahn

Kang

et al. 2022

Electronics

View full text Add to dashboard Cite

This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, a series inductor-based stability enhancement technique was utilized to improve the reverse isolation and stability performance of the amplifier and to mitigate the effect of the parasitic capacitance of the GaN HEMT device. To validate the concept of the design, a three-stage GaN HEMT LNA was designed and fabricated in a 0.15-um GaN on silicon carbide technology. The demonstrated design achieved a gain of 20.2 dB, a noise figure of 2.4–2.5 dB, an output 1-dB compression point of 17.2 dBm, and an output third-order intercept point of 32.2 dBm. The design also attained stability (μ criterion) up to 7.7 at the operating frequency. The implemented design consumed power of 320 mW with a nominal supply of 10 V.

show abstract