A wideband siw-to-waveguide transition at w-band

Broadband Right-Angle Rectangular Waveguide to Substrate Integrated Waveguide Transition with Distributed Impedance Matching Network

“…A comparison in terms of bandwidth and dimensions between this device and right-angle RWG-to-SIW transitions in referenced works [12][13][14][15][16][17][18][19][20][21] is presented in Table 6. All geometrical parameters refer to the SIW.…”

“…The lower the ratio r the lower the SIW section input impedance, and as a consequence the harder is to obtain good matching over a wide band. To perform a fair comparison between the various solutions reported in the literature [12][13][14][15][16][17][18][19][20][21] the bandwidth performance are therefore normalized with the introduction of the merit factor F = BW 20dB /r. It is worth mentioning that simulated results for standalone transitions are reported, in order to provide a comparison among data not affected by manufacturing errors in the fabricated prototypes.…”

“…Slot-to-slot coupling between the SIW and the RWG ground planes is employed in [14], but again the frequency range is still limited for many applications. The slots bandwidth can be extended with the same principle of aperture-coupled patch antennas by introducing additional substrate layers with printed parasitic patches [15,16]. Wider bandwidths can be found in [17][18][19], where transitions are matched by means of properly shaped apertures, stepped ridges, and SIW inductive posts.…”

A D-band Waveguide-SIW Transition for 6G Applications

“…The substrate integrated waveguide (SIW) technology has also been investigated for WG-PCB transitions [7][8][9][10][11]. SIWbased transitions are generally divided into two categories.…”

“…SIWbased transitions are generally divided into two categories. In the first category, tapered structures are designed to couple energy from the WGs that achieve wide bandwidth at the cost of large size and expensive fabrication [7][8][9][10][11]. In [7], a tapered SIW line with an extended dielectric substrate was utilized that produced a -10 dB IBW of 40 GHz (75-115 GHz).…”