A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

Abstract

In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contact material in order to limit the number of different chemical elements in the scheme. Our scheme was kept as simple as possible regarding the number of layers and chemical elements. Our scheme shows very good long-term stability and suitability for SiC-based microsystems. The experimental evaluation concept used here includes a combination of physical, electrical, and mechanical analysis techniques. This combined advance is necessary since modern physical analysis techniques still offer only limited sensitivity for detecting minimal changes in the metallization scheme.

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

“…As one of the third-generation semiconductor materials, SiC has a large energy band gap, superior mechanical properties, and extreme chemical inertness. Accordingly, the SiC-based pressure sensors are considered to be the most promising semiconductor for use in extreme environments, such as high temperatures, strong corrosion, and high radiation [11,12,13]. Silicon carbide has more than 250 crystal types, while it has three major crystal types, such as 3C-, 4H-, and 6H- [14,15].…”

Stability and electrical properties of MoSi2‐ and WSi2‐oxide electroconductive composites

“…Sensing applications in high temperature and harsh‐environments require advanced materials that can fulfill the required combination of physical, thermal, electrical and mechanical properties, such as a high melting point, good oxidation and corrosion resistance, high‐temperature thermal/chemical stability and electrical conductivity at elevated temperatures . Therefore, refractory transition metal silicides (MoSi 2 , WSi 2 , TaSi 2 etc.…”