The ATLAS IBL CollaborationDuring the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.The ATLAS [1] general purpose detector is used for the study of proton-proton (pp) and heavy-ion collisions at the CERN Large Hadron Collider (LHC) [2]. It successfully collected data at pp collision energies of 7 and 8 TeV in the period of 2010-2012, known as Run 1. Following an LHC shutdown in 2013-2014 (LS1), it has collected data since 2015 at a pp collision energy of 13 TeV (the so-called Run 2).The ATLAS inner tracking detector (ID) [1, 3] provides charged particle tracking with high efficiency in the pseudorapidity 1 range of |η| < 2.5. With increasing radial distance from the interaction region, it consists of silicon pixel and micro-strip detectors, followed by a transition radiation tracker (TRT) detector, all surrounded by a superconducting solenoid providing a 2 T magnetic field.The original ATLAS pixel detector [4,5], referred to in this paper as the Pixel detector, was the innermost part of the ID during Run 1. It consists of three barrel layers (named the B-Layer, Layer 1 and Layer 2 with increasing radius) and three disks on each side of the interaction region, to guarantee at least three space points over the full tracking |η| range. It was designed to operate for the Phase-I period of the LHC, that is with a peak luminosity of 1 × 10 34 cm −2 s −1 and an integrated luminosity of approximately 340 fb −1 corresponding to a TID of up to 50 MRad 2 and a fluence of up to 1 × 10 15 n eq /cm 2 NIEL. However, for luminosities exceeding 2 × 10 34 cm −2 s −1 , which are now expected during the Phase-I operation, the read-out efficiency of the Pixel layers will deteriorate. This paper describes the construction and surface integration of an additional pixel layer, the Insertable B-Layer (IBL) [6], installed during the LS1 shutdown between the B-Layer and a new smaller radius beam pipe. The main motivations of the IBL were to maintain the full ID tracking performance and robustness during Phase-I operation, despite read-out bandwidth limitations of the Pixel layers (in particular the B-Layer) at the expected Phase-I peak luminosity, and accumulated radiation damage to the silicon sensors and front-end electronics. The IBL is designed to operate until the end of Phase-I, when a full tracker upgrade is planned [7] for high luminosity LHC (HL-LHC) operation from approximately ...

The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the Spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment

-This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass cap with a silicon frame is used to package the switch. Single-pole-double-throw (SPDT) switches and a 24 -77 GHz reconfigurable LNA is also demonstrated as a first time implementation of single chip BiCMOS reconfigurable circuit at such high frequencies.

The increasing demands on future electronic products require more efficient system integration technologies. Especially the package density gap at board level with the high integrated circuits (ICs) on the one hand and the discrete passive components on the other has to be closed by new packaging technologies which integrate the passive components into the substrate, an interposer or the IC itself. This paper presents investigations for the common integration of inductors, resistors, capacitors as well as passive filter structures in a thin film build up, based on copper and benzocyclobutene (BCB). Technologies from wafer level packaging were adapted for manufacturing of the integrated components. The examinations were carried out with special focus on integrated coils and passive filter structures. Build up, design, processing as well as results of the electrical characterization of the integrated components are described in detail. Furthermore, an integrated passive device (IPD) for application as a filter element in the Bluetooth band is presente

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