Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

Kim, Woo‐Sic; Cho, Yong‐Jung; Lee, Yeol‐Hyeong; Park, JeongKi; Kim, GeonTae; Kim, Ohyun

doi:10.1016/j.sse.2017.08.001

Cited by 10 publications

(7 citation statements)

References 27 publications

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“…During natural recovery from PBS‐induced degradation, trapped electrons would be detrapped, and the created acceptor‐like states would be annihilated . Generally, created subgap states are more slowly recovered than the trapped carriers while TFTs recover from gate‐bias stresses . Thus at the early stage of V th recovery from PBS, which our experiments consider, detrapping of electrons would be more dominant than the decrease of acceptor‐like states.…”

Section: Resultsmentioning

confidence: 79%

“…a‐IGZO TFTs with inverted staggered and back‐channel‐etched structure were fabricated on glass substrate; their structure has been described in detail elsewhere . The TFTs used in the experiment had widths W 90, 100, 240, or 500 μm and lengths L 4.0, 4.5, or 5.0 μm.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Because of these merits, a‐IGZO is considered as a promising channel material for switching/driving TFTs in advanced display devices. Its reliability is a main concern for practical applications, and threatened by stresses such as gate bias, temperature, ambient effects, and illumination …”

Section: Introductionmentioning

confidence: 99%

“…Especially, positive gate‐bias stress (PBS) and negative gate‐bias stress (NBS) with or without illumination have been investigated extensively . PBS shifts threshold voltage V th in the positive direction; this trend is usually attributed to trapping of electrons, creation of acceptor‐like states (usually oxygen interstitials or zinc vacancies in a‐IGZO), or both . Under NBS (usually with illumination), V th shifts negatively; this trend is attributed to hole trapping, increase of subgap states (usually ionized oxygen vacancies in a‐IGZO), or both …”

Section: Introductionmentioning

confidence: 99%

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Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a‐InGaZnO Thin Film Transistors

Kang

Lee

Kim

et al. 2019

Physica Status Solidi (a)

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The relationship between detrapping of electrons and negative gate bias in amorphous InGaZnO thin film transistors (a-IGZO TFTs) is investigated. In these devices, positive gate-bias stress (PBS) traps electrons at the gate insulator (GI) or at the interface between the channel and the GI, and creates acceptor-like states, which the authors speculate may be oxygen interstitials or zinc vacancies. In contrast, negative gate-bias stress (NBS) increases donor-like states, which are speculated as ionized oxygen vacancies, near the interface. When subsequent negative gate bias (SNB) is applied to a TFT after PBS, electrons are detrapped and donor-like states are increased simultaneously. Measurements with various SNB and PBS conditions suggests that SNB accelerates detrapping of electrons, and that those detrapped electrons interrupts the increase of donor-like states.

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Section: Resultsmentioning

confidence: 79%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a‐InGaZnO Thin Film Transistors

Kang

Lee

Kim

et al. 2019

Physica Status Solidi (a)

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“…The hump phenomenon has been widely examined for the single-channel oxide TFTs [ 11 , 12 , 13 , 14 ]. Mechanisms including edge effects, charge trapping, multiple current paths, and creation of donor/acceptor-like defects have been proposed [ 15 , 16 , 17 , 18 , 19 , 20 ]. Nevertheless, there are relatively few studies on the hump phenomena of heterojunction TFTs.…”

Section: Introductionmentioning

confidence: 99%

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Dong

Han

et al. 2022

Nanomaterials

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Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/ITO heterojunction TFTs, and explored the effects of channel structures on the hump characteristics of ZnO/ITO TFTs. We found that Vhump–VON was negatively correlated with the thickness of the bottom ZnO layer (10, 20, 30, and 40 nm), while it was positively correlated with the thickness of the top ITO layer (3, 5, 7, and 9 nm), where Vhump is the gate voltage corresponding to the occurrence of the hump and VON is the turn-on voltage. The results demonstrated that carrier transport forms dual current paths through both the ZnO and ITO layers, synthetically determining the hump characteristics of the ZnO/ITO TFTs. Notably, the hump was effectively eliminated by reducing the ITO thickness to no more than 5 nm. Furthermore, the hump characteristics of the ZnO/ITO TFTs under positive gate-bias stress (PBS) were examined. This work broadens the practical application of TCO and provides a promising method for solving the hump phenomenon of oxide TFTs.

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Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

Cho

Kim

Lee

et al. 2018

Solid-State Electronics

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Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

Cited by 10 publications

References 27 publications

Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a‐InGaZnO Thin Film Transistors

Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a‐InGaZnO Thin Film Transistors

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

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