Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure

Abstract

This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after electroforming with low and high CC of 1 and 3 mA, respectively, which is contrary to previous reports. Furthermore, in the case of high-forming CC, TRS is observed after several switching cycles with a low-switching CC. Analysis of current-voltage relationship demonstrates that Poole-Frenkel conduction controlled by localized traps should be responsible for the resistance switching. The unique behaviors can be dominated by Joule heating filament mechanism in the dual-oxygen reservoir structure composed of Al/NiO interfacial layer and ITO. The tunable switching properties can render it flexible for device applications.

Point contact resistive switching memory based on self-formed interface of Al/ITO

“…In our previous reports, effect of the interface layer between oxide and Al electrode on resistive switching of Al/NiO/ITO should be considered 15 16 . Similarly, there should be an ultra-thin AlO x layer existed at the Al/ITO interface due to the standard Gibbs free energy of formation of oxides of metals.…”

“…3b . It might be associated with self-assembled interfacial layer due to interface chemical reaction 15 17 20 .…”

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

“…Nickel acetate tetrahydrate, and zinc acetate dihydrate were used as the metal source, and 2-methoxyethanol and ethanolamine as solvent and stabilizing agent, respectively. The details of NiO layer preparation can be found in our previous reports [17]. The mixed solution of nickel acetate tetrahydrate, 2-methoxyethanol, and ethanolamine in a stoichiometric ratio was stirred at 80°C for 1 h to obtain a homogeneous stacked solution (0.18 ml −1 ).…”

“…This is because an Ohmic contact is usually dominant due to the formation of conductive filaments. For example, the conductive filaments of ZnO and NiO are considered to be related to oxygen vacancies or metal ions [15][16][17][18]. Actually, n-ZnO/ p-NiO junction has attracted much attention for the applications in the fields of light-emitted diode, ultraviolet detector, photocatalyst, photovoltaic cell, and piezoelectric nanogenerator over the past 20 years [19][20][21][22][23][24].…”

Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

“…Resistive switching behaviors of NiO lms have shown multiple modes, depending on electrode materials, operating voltage, and electroforming process. 8,[20][21][22] In this work, we adopted Mn doping to modulate the electrical properties which can effectively improve the switching performance of NiO lms. Furthermore, the switching mechanisms were discussed.…”