About the determination of the Schottky barrier height with the C-V method

Abstract

On the basis of general notions about Schottky barrier contacts (SBC) with the insulating layer and interface states (ISs) communicating with semiconductor and metal (when their influence results in the linear bias-dependence of the barrier height and the ideality factor n=const), it is shown that the barrier height determined with C-V method is defined with a simple expression: ϕbc=nϕb0-(n-1)(ϕs+V2), practically corresponding to the flatband barrier height expression determined from I-V-characteristic: ϕbf=nϕb0-(n-1)ϕs. The apparent difference is related to the difference in implementation of the flatband condition in both cases. Earlier, the close correspondence of values ϕbc and ϕbf was only known for the ideal Bardeen model, practically excluding values n>1. The received result is also proved by the detailed analysis of possible conditions of determining the SBC capacity (different frequencies of the test signal, presence or absence of ISs, and their communication with semiconductor and/or metal). It is essential that the measured barrier height ϕbc remains almost independent of the frequency of the test signal and is determined with the relation between the applied voltage and its part dropping in the barrier only.

Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light

“…On the other hand, for the device with the same SBHs at two ends, the I–V curve is symmetric, whereas, the asymmetric I–V characteristic presented in this work indicates the disparate SBHs at two ends of the devices, the band diagrams and the simulated I–V curves of abovementioned conditions are illustrated in Figs S2(a) and S2(b) , respectively. The rectifier characteristics of a Schottky device can be expressed physically through thermionic emission theory; thus, the values of the SBHs (φ b ) of devices can be determined using various techniques 18 19 . For example, Chiquito et al proposed a general equation to describe the behavior of current flow across a back-to-back Schottky-contacted device 20 , in turn allowing determination of its various parameters (e.g., φ b and ideality factors).…”

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

“…Though, the BH determined from the C −2 – V characteristics at high frequency decreased linearly with increasing temperature where biasing mode is reverse biased. The BH determined from C – V technique, is governed by depletion region thickness and this is less sensitive to small scale inhomogeneity …”

Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height

“…37 An attribution of two types of states to this model is an assumption, which however has convincing experimental evidence (see, for example, Ref. 38, and references therein).…”