Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers

Semtsiv, M. P.; Ziegler, Mathias; Dressler, S.; Masselink, W. T.; Georgiev, Nikolai I.; Dekorsy, Thomas; Helm, M.

doi:10.1063/1.1789246

Cited by 64 publications

(23 citation statements)

References 11 publications

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“…This discrepancy can be attributed to possible grading of the heterointerface, 14 slight deviation of the sample parameters from the nominal values, as well as to the simplified treatment of the nonparabolicity of the conduction band in our calculations. 14,15 In the case of A24, the shoulder of the absorption band attributed to the overlaping 2-4 and 1-4 transitions extends beyond 800 meV.…”

Section: Experimental and Discussionmentioning

confidence: 99%

“…Because InGaAsAlAs is a strain-compensated extension of the technologically mature In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As materials system, it is being actively developed for high-performance intersubband devices ͑both lasers and detectors͒ operating in the mid-infrared spectrum. [13][14][15][16] In particular, progress toward short wavelengths using InGaAs-AlAs-InAlAs straincompensated heterostructures with the average lattice constant that of InP has been reported by several groups. 13 17.…”

Section: Introductionmentioning

confidence: 99%

“…One significant advantage of this design strategy compared to single-well approaches is the ease of strain compensation due to the increased thickness of the ͑In,Ga͒As. Figure 1 depicts the conduction band edge E c and the calculated probability function for confined electronic states 14,15 in a representative DQW sample. The arrows on The highest-energy transitions are 2-4 and 1-4, the prime candidates for reaching the 1.55-m absorption band.…”

Section: Introductionmentioning

confidence: 99%

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Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Kasai

Mozume

Yoshida

et al. 2004

phys. stat. sol. (c)

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Intersubband optical transitions at short wavelengths in strain-compensated In 0.70 Ga 0.30 As-AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55 m, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on ͑001͒InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2 -4 m. Significant oscillator strength, however, also extends out to 800 meV, 1.55 m.

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Section: Experimental and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Kasai

Mozume

Yoshida

et al. 2004

phys. stat. sol. (c)

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“…Realization of QCLs within this region is especially challenging because of the large conduction band discontinuity ( c E D ) needed for the large intersubband energy differences required. The three leading contenders for short wavelength QCLs, all with very large conduction band discontinuities, are InAs-AlSb on InAs [3,4], InGaAs-AlAsSb on InP [5,6], and InGaAs-AlAs on InP [7]. Emission wavelengths near 3 µm have been demonstrated in all three systems [4,6,8].…”

mentioning

confidence: 94%

Physics, growth, and performance of (In,Ga)As–AlP/InP quantum‐cascade lasers emitting at λ < 4 μm

Masselink

Semtsiv

Dressler

et al. 2007

Physica Status Solidi (b)

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PACS 42.55. Px, 73.21.Fg, 81.15.Hi The design strategy and performance for short wavelength (l < ≈ 4 µm) quantum-cascade lasers (QCLs) is discussed. The QCLs are based on strain-compensated AlAs -In 0 73. Ga 0 27 . As heterostructures grown using gas-source molecular-beam epitaxy on InP substrates. Both composite barriers based on AlAs -In 0 55. Al 0 45 . As and composite wells based on In 0 73 . Ga 0 27 . As -In 0 55 . Al 0 45 . As are used to achieve laser emission at wavelengths as short as 3.05 mm by avoiding leakage from the upper laser state into either the higher-lying miniband or into indirect states within the heterostructure. IntroductionThe ability to create artificial materials through the use of epitaxially grown semiconductor heterostructures has been one of the driving mechanisms of modern electronic and optical devices. Today structures derived from such materials engineering are routinely implemented into high-speed transistors, into photodetectors, and into most semiconductor laser diodes. The requirements for creating the structures for such devices are excellent materials quality, a high level of control over the material composition and doping, and the ability to change the material and/or doping over an extremely short distance, on the order of one atomic monolayer.Recently a new class of semiconductor injection laser has been introduced, the quantum cascade laser (QCL) [1,2], that represents one of the most impressive examples of band structure engineering through advanced epitaxial growth for a semiconductor device. The QCL is a unipolar laser, whose operation is based exclusively on the conduction band with no involvement of holes. Thus, the emission wavelength is determined by the conduction band structure of the heterostructure and not on the band gap between conduction and valence bands.The basic idea of the QCL is that an active region of one or several quantum wells is designed so that the optical transition between two subbands has both the intended energy for the laser emission as well as an adequate oscillator strength. Electrons are injected into the upper state from an injector miniband, they cause a photon to be emitted as they relax to the lower state, and then they vacate the lower state into an extraction miniband. By cascading a number of such active regions, the extraction miniband of one active region becomes the injection miniband of the next active region. Thus, each electron can emit An important direction in QCLs for a number of applications is emission within the first atmospheric window (2.9-5.3 µm). Realization of QCLs within this region is especially challenging because of the large conduction band discontinuity ( c E D ) needed for the large intersubband energy differences required. The three leading contenders for short wavelength QCLs, all with very large conduction band discontinuities, are InAs-AlSb on InAs [3,4], InGaAs-AlAsSb on InP [5,6], and InGaAs-AlAs on InP [7]. Emission wavelengths near 3 µm have been demonstrated in all three systems [4,6,8]. The...

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“…Reaching wavelengths below 4 μm has proven to be very challenging. [31][32][33][34][35][36] However this situation may soon change, for research in this field is active in several groups. [33][34][35][37][38][39][40][41][42] In the most widely used AlInAs/GaInAs material system, a short-wavelength midinfrared QCL, emitting pulsed at 3.5 μm (at 280 K), was demonstrated using straincompensated AlInAs/GaInAs on InP substrates.…”

Section: Short-wavelength Mid-ir Qclsmentioning

confidence: 99%

High-performance midinfrared quantum cascade lasers

Capasso

2010

Opt. Eng

184

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Abstract. The design and operating principles of quantum cascade lasers (QCLs) are reviewed along with recent developments in high-power cw and broadband devices. Cw power levels of several watts at room temperature have been achieved at 4.6-μm wavelength; broadband single-mode tuning (≈400 cm −1 ) has been achieved using an external-cavity QCL with a grating as a tuning element. An alternative approach, consisting of a monolithically integrated array of single-mode QCLs individually currentdriven by a microcontroller, has led to broadband single-mode tuning over a range of 200 cm −1 without requiring the use of moving parts. This spectrometer on a chip holds promise for high-brightness compact tracegas sensors capable of operating in harsh environments. C 2010 Society of Photo-Optical Instrumentation Engineers.

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Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers

Cited by 64 publications

References 11 publications

Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Physics, growth, and performance of (In,Ga)As–AlP/InP quantum‐cascade lasers emitting at λ < 4 μm

High-performance midinfrared quantum cascade lasers

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