Absorbed dose assessment in particle-beam irradiated metal-oxide and metal-nonmetal memristors

Abstract

Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region disposed between and in electrical contact with electrodes. Following materials were considered for the active region: titanium dioxide, zirconium dioxide, hafnium dioxide, strontium titanium trioxide and galium nitride. Obtained results show that significant amount of oxygen ion - oxygen and nonmetal ion - nonmetal vacancy pairs is to be generated. The loss of such vacancies from the device is believed to deteriorate the device performance over time. Estimated absorbed dose values in the memristor for different constituting materials are of the same order of magnitude because of the close values of treshold displacement energies for the investigated materials

Simulation-based calculations of the proton dose in phase change memory cells

“…Val ues of pro ton en ergy loss were used to cal cu late the pro ton ab sorbed dose in the en tire cell and in the phase change layer alone. The val ues ob tained for the ab sorbed dose in in ves ti gated PCM cells are of the or der of mag ni tude of 10 4 Gy which is in com pli ance with the re ported re sults of pro ton dose as sess ment in sim i lar nanometer mem ory cell struc tures [8]. Three most com monly used phase change ma te ri als were in ves ti gated.…”

“…In spite of these lim i ta tions, sev eral ex per i ments have been re ported at very low tem per a tures (15-40 K), val i dat ing the TRIM re sults [21]. Also, TRIM has been suc cess fully used for sim ula tions of ra di a tion ef fects in var i ous kinds of mem ory cells and com po nents [8][9][10]22].…”

“…Pre vi ous cal cu la tions of the pro ton dose and absorbed dose from ion beams in mem ory com po nents mostly used, have now a days shown that there are ir radi a tion con di tions and dose lev els for ev ery type of mem ory cell when ra di a tion-in duced changes of charac ter is tics and func tion al ity of these cells should be ex pected [8][9][10].…”

Simulation of radiation effects in ultra-thin insulating layers

“…It there fore has an al most straight tra jec tory in mat ter, los ing en ergy con tin u ously in small amounts through col li sions with atomic elec trons, leav ing ion ized and ex cited at oms along its path. Only oc ca sion ally does it un dergo a sub stan tial de flec tion, due to the elas tic scat ter ing from an atomic nu cleus [1][2][3].…”

Simulation of Proton Beam Effects in Thin Insulating Films

“…It therefore has an almost straight trajectory in matter, losing energy continuously in small amounts through collisions with atomic electrons, leaving ionized and excited atoms along its path. Only occasionally does it undergo a substantial deflection, due to elastic scattering from an atomic nucleus [1][2][3][4].…”