Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region disposed between and in electrical contact with electrodes. Following materials were considered for the active region: titanium dioxide, zirconium dioxide, hafnium dioxide, strontium titanium trioxide and galium nitride. Obtained results show that significant amount of oxygen ion - oxygen and nonmetal ion - nonmetal vacancy pairs is to be generated. The loss of such vacancies from the device is believed to deteriorate the device performance over time. Estimated absorbed dose values in the memristor for different constituting materials are of the same order of magnitude because of the close values of treshold displacement energies for the investigated materials

Monte Carlo simulations of proton irradiation on phase change memory cells were conducted and the proton dose, in both the whole memory cell and in its active layer, calculated. The memory cell was modeled by a multi-layer stack consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. Materials considered for the active region were Ge2Sb2Te5, AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to proton beams were investigated for various thicknesses of phase change materials and different proton energies. Radiation-induced changes in the investigated memory cells are presented, including the accumulation of atomic displacements and the thermal heating of the active region. Possible effects of these changes on cell operation are discussed. [Projekat Ministarstva nauke Republike Srbije, br. 171007

some machine learning algorithms for sex identification based on linear mandibular measurements derived from CT scans .

Targeting sonic hedgehog pathway in combination with proton radiation or gamma irradiation decreases viability of glioma cell lines .

Targeting sonic hedgehog pathway in combination with proton radiation or gamma irradiation decreases viability of glioma cell lines .