This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

This study investigates the effects of neutron radiation on -characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 × 10 6 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

The Monte Carlo simulations of charged particle transport are used to investigate the effects of exposing ultra-thin layers of insulators (commonly used in integrated circuits) to beams of protons, alpha particles and heavy ions. Materials considered include silicon dioxide, aluminum nitride, alumina, and polycarbonate - lexan. The parameters that have been varied in simulations include the energy of incident charged particles and insulating layer thickness. Materials are compared according to both ionizing and non-ionizing effects produced by the passage of radiation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

The possibility of substituting the usage of a radioactive ?-source to improve the characteristics of the gas surge arrester is considered in this paper. The solution to this problem is sought in the engineering of the characteristics by applying different electrode materials and varying electrode surface topography. Materials that differ in the output work value were examined. The electrode surface topographies were either polished, or with engraved regular spikes, or with polished cavities. The paper is mostly experimental in nature. The experiments were performed under well-controlled laboratory conditions. The measurement uncertainty of the experimental procedure was satisfactory. Experimental results were processed by sophisticated statistical methods of low statistical unreliability. The obtained results show that it is possible to avoid the installation of a radioactive source in the gas surge arresters and how it should be done. In this way, a possible contamination of the natural environment with extremely dangerous ??radioactive sources would be avoided.

Monte Carlo simulations of proton irradiation on phase change memory cells were conducted and the proton dose, in both the whole memory cell and in its active layer, calculated. The memory cell was modeled by a multi-layer stack consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. Materials considered for the active region were Ge2Sb2Te5, AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to proton beams were investigated for various thicknesses of phase change materials and different proton energies. Radiation-induced changes in the investigated memory cells are presented, including the accumulation of atomic displacements and the thermal heating of the active region. Possible effects of these changes on cell operation are discussed. [Projekat Ministarstva nauke Republike Srbije, br. 171007