Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

Abstract

This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

Photodiodes, phototransistors and solar cells behaviour in environment with gamma and neutron radiation: literature review and experiments

“…Degradation of the main parameters (I-V characteristics) of the optoelectronic devices and their improvement, as a consequence of annealing, was observed for all used samples and published in International Journal of Photoenergy [3] and FME Transactions [4]. Nikolić at all [3,4] confirm that gamma irradiation leads to degradation of the I-V characteristics and then annealing improves these characteristics ( Fig. 1 to 3.).…”

Comparative study of gamma and neutron irradiation effects on the silicon solar cells parameters

“…During the process of annealing, defects cluster and some electrical inactive defects become active in a cluster. When electrical properties are monitored during this defect rearrangement (or annealing) process, a decrease in the effectiveness of the damage with increasing time is typically observed [25,26].…”

Ionizing Radiations (Alpha, Beta, Gamma) Effects on CdS / P-Si Heterojunction Solar Cell for Electrical and Optical Properties

“…As can be seen, I-V characteristics of cells deteriorated with increasing gamma irradiation. From figure 6, fundamental parameters of solar cells such as open circuit voltage (V oc ), short circuit current (I sc ), fill factor (ff) and efficiency (η) could be extracted (Ali, Gouveas, Hasan, Zaidi, & Asghar, 2011;Nikolić, Stanković, Timotijević, Rajović, & Vujisić, 2013;Vasic, Osmokrovic, Marjanovic, & Pejović, 2013). Vol.…”