Accelerated ICP etching of 6H-SiC by femtosecond laser modification

Huang, Yigang; Tang, Fei; Guo, Zheng; Wang, Xiaohao

doi:10.1016/j.apsusc.2019.05.262

Cited by 46 publications

(15 citation statements)

References 31 publications

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“…on/in the silicon carbide substrate. As of today, there is a fairly large variety of techniques for the processing of silicon carbide that allow, to some extent, to solve the following problem: wet etching; etching in solvents, stimulated by femtosecond laser; plasma etching; etching in plasma atmospheric discharge; plasma jet processing, and etc [15][16][17][18][19][20][21][22][23][24][25] . The choice of silicon carbide processing method is determined by the specific target, but nevertheless any of the methods must meet a number of general requirements: minimal defect formation on the surface of the etched profile, high etching rates, and high directionality of the processed window during the etching process.…”

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confidence: 99%

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

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Iankevich

Speshilova

et al. 2020

Sci Rep

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In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (Rms = 0.7 nm) in silicon carbide (SiC). These structures were obtained by dry etching in SF6/O2 inductively coupled plasma (ICP) at increased substrate holder temperatures. It was shown that change in the temperature of the substrate holder in the range from 100 to 300 °C leads to a sharp decrease in the root mean square roughness from 153 to 0.7 nm. Along with this, it has been established that the etching rate of SiC also depends on the temperature of the substrate holder and reaches its maximum (1.28 µm/min) at temperatures close to 150 °C. Further temperature increase to 300 °C does not lead to the etching rate rising. The comparison of the results of the thermally stimulated process and the etching with a water-cooled substrate holder (15 °C) is carried out. Plasma optical emission spectroscopy was carried out at different temperatures of the substrate holder.

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confidence: 99%

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Осипов

Iankevich

Speshilova

et al. 2020

Sci Rep

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“…Attempts were also made to increase the rate of SiC etching by the initial modification of the studied samples by irradiation them with a laser prior to the etching process. Huang et al [ 46 ] obtained an etching rate of 9365 Å/min, which was increased by 117.18% over the etching rate of the untreated sample, after irradiation of 6H-SiC samples with 800 nm-femtosecond laser at a pulse duration of 120 fs and repetition frequency of 1 kHz. The presence of the SiO 2 top layer and the increased surface roughness resulting from the modification of samples’ surfaces with the laser beam could contribute to a higher etching rate.…”

Section: Etching Of Sic With Different Plasmasmentioning

confidence: 99%

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

et al. 2021

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The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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“…22 Similarly, Tang et al investigated a method for ultrafast etching of SiC by integrating a femtosecond laser with ICP etching based on SF 6 /O 2 and obtained taper angles of 117°. 23 Likewise, Zekentes et al used a SF 6 /Ar gas mixture to perform etching of SiC and monitored both the etch rate and SiC surface roughness by interferometry. 24 Jiang et al studied the plasma etching of SiC using a Cl 2 /Ar mixture and observed high etch rates and the absence of microtrenches at a substrate temperature of −80 °C.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Also, Wang and Yao et al obtained trenches with a vertical profile using SF 6 /O 2 , but it was necessary to use a BCl 3 /N 2 gas mixture to smooth the bevel (taper) angle . Similarly, Tang et al investigated a method for ultrafast etching of SiC by integrating a femtosecond laser with ICP etching based on SF 6 /O 2 and obtained taper angles of 117° . Likewise, Zekentes et al used a SF 6 /Ar gas mixture to perform etching of SiC and monitored both the etch rate and SiC surface roughness by interferometry .…”

Section: Introductionmentioning

confidence: 99%

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

et al. 2021

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Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF 6 -based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.

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Accelerated ICP etching of 6H-SiC by femtosecond laser modification

Cited by 46 publications

References 31 publications

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

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