Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs

Voorde, Paul Vande; Griffin, P.B.; Oh, Sang-Yong; Dutton, R.W.

doi:10.1109/iedm.1996.554103

Cited by 17 publications

(13 citation statements)

References 5 publications

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“…However, two-dimensional solutions are preferred for simulating MOSFET operation. Vande Voorde et al [17] reported a 2-D implementation based on simplified quantization model, but used it only to compute the gate capacitance. On the other hand, Spinelli et al [18] reported a 2-D extension of the 1-D model and its implementation in a general-purpose device simulator.…”

Section: Figurementioning

confidence: 99%

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Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Srikantaiah

DasGupta

2012

IETE Tech Rev

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In this paper, the quantum mechanical (QM) effects in bulk MOSFETs and their modeling approaches in the compact modeling framework are reviewed. As the device dimensions are scaled to the sub-100 nm range, QM effects affect the device properties, such as effective oxide thickness, inversion layer charge density and profile, threshold voltage, effective bandgap, gate capacitance, mobility, surface potential, subthreshold characteristics, drain current, and gate leakage current. The classical theory is no longer sufficient for accurate modeling of these device characteristics. In this paper, models which have incorporated QM effects to obtain the device characteristics are discussed and compared. The roles of QM effects in affecting some of the device properties are also presented. KeywordsBulk MOSFETs, Quantum mechanical effect, Review on compact modeling. ( ) , which is used to solve eqn. (1) by numerical methods. Only certain energy levels, denoted by E ij , satisfy the Schrödinger equation and correspond to the energy levels of the sub-bands. Here, i=L for the lower valley and i=H for the higher valley, while j=0, 1, 2, 3…, corresponds the sub-band number. The electron concentration n y IETE TECHNICAL REVIEW | VOL 29 | ISSUE 1 | JAN-FEB 2012 AUTHORS Jayadeva Gowrapura Srikantaiah received the B.E. degree in electronics and communication engineering from NMAM Institute of Technology, Nitte, in 1990, M.Tech degree in digital electronics and advanced communication from the Karnataka Regional Engineering College, Surathkal (Present NITK), in 1995, both were affiliated to Mangalore University, India and Ph.D degree from I.I.T. Madras in 2010. His Ph.D. dissertation was on analytical models incorporating quantum mechanical effects for short n-channel MOSFETS. He joined as a lecturer in NMAM Institute of Technology, Nitte, in 1990 and later as Assistant Professor at JNNCE Shimoga in 1998. He has been a Faculty member in the department of electronics and communication engineering, Nagarjuna College of Engineering and Technology, Bangalore, since September 2010 and is currently a Professor and Head. His research interests are modeling and simulation of bulk and SOI MOSFETs including quantum mechanical effects and low power VLSI design.

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Section: Figurementioning

confidence: 99%

“…The QM.PHILI model uses van Dort band gap widening approach [16], with a fitting parameter to account for quantized levels above the ground state [17] and a modified  [48] in eqn. (13).…”

Section: Widening Of the Band-gap And Modification Of Intrinsic Carrimentioning

confidence: 99%

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Srikantaiah

DasGupta

2012

IETE Tech Rev

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“…Figure 2 shows the comparison between experimentally measured and simulated nMOS C-V data for an oxide thickness of 2 nm and area of 100 × 100 µm 2 . For this analysis, the substrate doping profile is obtained using a process simulation that includes TED (transient enhanced diffusion) effects [6]. The reduction of gate capacitance in the accumulation region is related to the QM effect; the reduction in the inversion region is related to both the QM and poly-depletion effects.…”

Section: C C-v V V Model With Qm Correctionsmentioning

confidence: 99%

Modeling of MOS scaling with emphasis on gate tunneling and source/drain resistance

Choi

Dutton

2000

Superlattices and Microstructures

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“…Many forms of quantum correction to classical electronic device models have been proposed or implemented. These include MOSFET-specific quantum corrections [2,3] and generic quantum corrections to the drift-diffusion [4], hydrodynamic [5], and Boltzmann transport equation models [6]. Therefore, the semiconductor industry needs a new fully quantum-mechanically based TCAD (technology computer aided design) tool.…”

Section: Introductionmentioning

confidence: 99%

Development of quantum device simulator NEMO-VN1

Hiền¹,

Lưỡng²,

Minh³

et al. 2009

J. Phys.: Conf. Ser.

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Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs

Cited by 17 publications

References 5 publications

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review

Modeling of MOS scaling with emphasis on gate tunneling and source/drain resistance

Development of quantum device simulator NEMO-VN1

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