Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

马中发,; 张鹏,; 吴勇,; Hua, Li; 庄奕琪,; 杜磊,

doi:10.1088/1674-1056/19/3/037201

Cited by 5 publications

References 10 publications

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A theoretical extraction scheme of transport information based on exclusion models

et al. 2010

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In order to explore how to extract more transport information from current fluctuation, a theoretical extraction scheme is presented in a single barrier structure based on exclusion models, which include counter-flows model and tunnel model. The first four cumulants of these two exclusion models are computed in a single barrier structure, and their characteristics are obtained. A scheme with the help of the first three cumulants is devised to check a transport process to follow the counter-flows model, the tunnel model or neither of them. Time series generated by Monte Carlo techniques is adopted to validate the abstraction procedure, and the result is reasonable.

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A theoretical extraction scheme of transport information based on exclusion models

et al. 2010

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Monte Carlo study of single-barrier structure based on exclusion model full counting statistics

陈华¹,

杜磊²,

曲成立³

et al. 2011

Chinese Phys. B

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Different from the usual full counting statistics theoretical work that focuses on the higher order cumulants computation by using cumulant generating function in electrical structures, Monte Carlo simulation of single-barrier structure is performed to obtain time series for two types of widely applicable exclusion models, counter-flows model, and tunnel model. With high-order spectrum analysis of Matlab, the validation of Monte Carlo methods is shown through the extracted first four cumulants from the time series, which are in agreement with those from cumulant generating function. After the comparison between the counter-flows model and the tunnel model in a single barrier structure, it is found that the essential difference between them consists in the strictly holding of Pauli principle in the former and in the statistical consideration of Pauli principle in the latter.

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Random telegraph noise on the threshold voltage of multi-level flash memory

Liao

et al. 2017

Chinese Phys. B

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We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation (∆V th ) and the distribution due to RTN increase with the programmed level (V th ) of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.

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Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

Cited by 5 publications

References 10 publications

A theoretical extraction scheme of transport information based on exclusion models

A theoretical extraction scheme of transport information based on exclusion models

Monte Carlo study of single-barrier structure based on exclusion model full counting statistics

Random telegraph noise on the threshold voltage of multi-level flash memory

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