Monte Carlo study of single-barrier structure based on exclusion model full counting statistics

Abstract

Different from the usual full counting statistics theoretical work that focuses on the higher order cumulants computation by using cumulant generating function in electrical structures, Monte Carlo simulation of single-barrier structure is performed to obtain time series for two types of widely applicable exclusion models, counter-flows model, and tunnel model. With high-order spectrum analysis of Matlab, the validation of Monte Carlo methods is shown through the extracted first four cumulants from the time series, which are in agreement with those from cumulant generating function. After the comparison between the counter-flows model and the tunnel model in a single barrier structure, it is found that the essential difference between them consists in the strictly holding of Pauli principle in the former and in the statistical consideration of Pauli principle in the latter.

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

“…[11,12] Meanwhile, many theoretical methods including Monte Carlo (MC), molecular dynamics (MD), ab initio, and computational fluid dynamics (CFD), can provide some useful results in epitaxial growth and investigate the related factors that may affect the growth. [13][14][15][16][17][18][19][20] Wang et al used Monte Carlo simulations to study the effects of substrate temperature, Ga flux on growth rate, and growth front quality. [21] Gong et al discussed the growth behavior of GaN film along the non-polar [1 1 −2 0] direction using MD simulations.…”