In order to explore how to extract more transport information from current fluctuation, a theoretical extraction scheme is presented in a single barrier structure based on exclusion models, which include counter-flows model and tunnel model. The first four cumulants of these two exclusion models are computed in a single barrier structure, and their characteristics are obtained. A scheme with the help of the first three cumulants is devised to check a transport process to follow the counter-flows model, the tunnel model or neither of them. Time series generated by Monte Carlo techniques is adopted to validate the abstraction procedure, and the result is reasonable.

Different from the usual full counting statistics theoretical work that focuses on the higher order cumulants computation by using cumulant generating function in electrical structures, Monte Carlo simulation of single-barrier structure is performed to obtain time series for two types of widely applicable exclusion models, counter-flows model, and tunnel model. With high-order spectrum analysis of Matlab, the validation of Monte Carlo methods is shown through the extracted first four cumulants from the time series, which are in agreement with those from cumulant generating function. After the comparison between the counter-flows model and the tunnel model in a single barrier structure, it is found that the essential difference between them consists in the strictly holding of Pauli principle in the former and in the statistical consideration of Pauli principle in the latter.

This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio (τ̄c/τ̄e) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a ‘vacancy–ion complex’ as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter—grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.