Ｂａｓｅｄｏｎｔｈｅｃｏｎｃｅｐｔｏｆｆｒｅｅｖｏｌｕｍｅｉｎｇｒａｉｎｂｏｕｎｄａｒｙ ,ａｕｎｉｆｉｅｄｍｏｄｅｌｆｏｒ1 ｆｎｏｉｓｅａｎｄ 1 ｆ2 ｎｏｉｓｅｉｎｍｅｔａｌｆｉｌｍｉｓｐｒｏ ｐｏｓｅｄ.Ｉｔｉｓｓｈｏｗｎｆｒｏｍｔｈｅｍｏｄｅｌｔｈａｔｔｈｅｎｏｉｓｅｉｎｔｈｅｍｅｔａｌｆｉｌｍｗｉｔｈｐｅｒｆｅｃｔｐｏｌｙｃｒｙｓｔａｌｌｉｎｅｓｔｒｕｃｔｕｒｅａｐｐｅａｒｓｔｏｂｅ 1 ｆｔｙｐｅ,ｗｈｉｌｅ 1 ｆ2 ｃｏｍｐｏｎｅｎｔｉｓｉｎｔｒｏｄｕｃｅｄｗｈｅｎｔｈｅｆｉｌｍｉｓｓｕｂｊｅｃｔｅｄｔｏａｃｅｒｔａｉｎｅｌｅｔｒｏｍｉｇｒａｔｉｏｎｓｔｒｅｓｓａｎｄｔｈｅｖｏｉｄｓｔｈｕｓｉｎｄｕｃｅｄ.Ｉｔｉｓｏｂｓｅｒｖｅｄｉｎｔｈｅｅｌｅｃｔｒｏｍｉｇｒａｔｉｏｎｓｔｒｅｓｓｔｅｓｔｃｏｎｄｕｃｔｅｄｂｙｐｒｅｓｅｎｔａｕｔｈｏｒｓｔｈａｔγｉｓ1 0ｏｒｓｏｆｏｒｔｈｅｍｅａｓｕｒｅｄ 1 ｆγ ｎｏｉｓｅｉｎｔｈｅｍｅｔａｌｆｉｌｍｉｎｔｈｅｉｎｉｔｉａｌｓｔａｇｅｓｏｆｔｈｅｔｅｓｔ,ｂｕｔγａｂｒｕｐｔｌｙｉｎｃｒｅａｓｅｄｔｏｏｖｅｒ1 6ａｓｓｏｏｎａｓｔｈｅｖｏｉｄｓａｒｅｆｏｒｍｅｄ .Ｔｈｉｓａｇｒｅｅｓｗｉｔｈｔｈｅｐｒｅｄｉｃｔｉｏｎｏｆｔｈｅｄｅｖｅｌｏｐｅｄｍｏｄｅｌ.

This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio (τ̄c/τ̄e) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a ‘vacancy–ion complex’ as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter—grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively.