2007 Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition 2007
DOI: 10.1109/date.2007.364517
|View full text |Cite
|
Sign up to set email alerts
|

Accurate Temperature-Dependent Integrated Circuit Leakage Power Estimation is Easy

Abstract: Abstract-It has been the conventional assumption that, due to the superlinear dependence of leakage power consumption on temperature, and widely varying on-chip temperature profiles, accurate leakage estimation requires detailed knowledge of thermal profile. Leakage power depends on integrated circuit (IC) thermal profile and circuit design style. We show that linear models can be used to permit highly-accurate leakage estimation over the operating temperature ranges in real ICs. We then show that for typical … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
132
0
1

Year Published

2007
2007
2022
2022

Publication Types

Select...
4
3
3

Relationship

0
10

Authors

Journals

citations
Cited by 173 publications
(133 citation statements)
references
References 18 publications
0
132
0
1
Order By: Relevance
“…Power consumption, usually expressed as the sum of dynamic power and static power, influences system temperature, which in turn, exponentially affects static power [1]. This interdependency makes it unavoidable to consider temperature when dealing with power.…”
Section: A Power Consumption and Temperaturementioning
confidence: 99%
“…Power consumption, usually expressed as the sum of dynamic power and static power, influences system temperature, which in turn, exponentially affects static power [1]. This interdependency makes it unavoidable to consider temperature when dealing with power.…”
Section: A Power Consumption and Temperaturementioning
confidence: 99%
“…Therefore, we detail only our empirical approach to extract the leakage current and switching capacitance. the temperature, q is the charge, V GS is the gate to source voltage, V th is the threshold voltage, n is the sub-threshold swing coefficient, and I gate is the gate leakage current [29,38]. These technology and parameters are then condensed into parameters denoted by c 1 and c 2 .…”
Section: Power Modelingmentioning
confidence: 99%
“…A recent study shows that highly-efficient and accurate temperature-dependent leakage power analysis is possible using coarse-grained thermal modeling [11]. Leakage power mainly depends on IC thermal profile and circuit design style.…”
Section: Temperature-dependent Leakage Power Analysismentioning
confidence: 99%